Atomically Controlled Processing and Micromorphological Characterization of Multilayer Thin Films

的实验和理论研究 界面的形态和化学粗糙度， 多层结构，以及这种粗糙度的演变 与生长和加工条件，将进行。 粗糙度的演变和中断的影响 通过引入一个新的层将进行调查，因为 应变对生长前沿粗糙度的影响。 掩埋界面的X射线衍射测量将 与生长前沿相关性的STM测量进行比较 功能协调发展的 统计力学方法将用于 开发多层结构的生长模型，其中 动力学过程周期性地变化。 发光和 在可能的情况下，电测量将被关联。 研究将首先集中在Si/SiGe和III-V族化合物 超晶格 %%% 化学上或结构上 可区分的层是至关重要的 性能的主机设备，包括光子， 电子或光学，其独特的性能取决于 多层薄膜。 在这样的结构中， 接口在性能方面起着决定性的作用。 这 研究将提高我们对影响的理解 接口质量对设备性能的影响， 界面形态的定量测量， 与电学和光学性质的相关性。 在 特别是与生长和加工的联系 条件将进行探索，改善的前景 用于制造多层膜装置的技术。

Experimental and theoretical investigations of the morphological and chemical roughness of interfaces in multilayer structures, and the evolution of such roughness with growth and processing conditions, will be conducted. The evolution of roughness and the effect of interruption by the introduction of a new layer will be investigated, as will be the influence of strain on growth front roughness. X-ray diffraction measurements of buried interfaces will be compared to STM measurements of growth front correlation functions. Statistical mechanical methods will be used to develop models for growth of multilayer structures in which kinetic processes change periodically. Luminescence and electrical measurements will be correlated where possible. Studies will initially focus on Si/SiGe and III-V compound superlattices. %%% Interfaces between chemically or structurally distinguishable layers are critically important in the performance of a host of devices, including photonic, electronic, or optical, whose unique properties depend on the multiple layering of thin films. In such structures, interfaces play a decisive role in performance. This research will enhance our understanding of the influence of interface quality on device performance by providing quantitative measures of interface morphology and correlation to electrical and optical properties. In particular, the connection with growth and processing condition will be explored, with the prospect of improved technology for the fabrication of multilayer-film devices.