Deposition of AlN Films from Organoaluminum-Nitrogen Compounds: A Paradigm for CVD from Single-Source Precursors

该奖项由材料合成和加工倡议下的化学司特别项目办公室颁发。这项研究将解决由有机金属前驱体通过化学气相沉积(CVD)形成复合材料薄膜的问题。其目的是将前驱体的基本气相和表面化学行为与所得薄膜的结构和纯度以及前体转化为最终产品的效率相关联。要研究的系统是由含有铝和氮的有机铝-氨或-酰胺前驱体以正确的化学计量比生产AlN薄膜。这些前体的气相和表面化学将使用质谱学和飞行时间测量相结合的方法和脉冲光束傅里叶变换微波光谱分析相结合的方法进行研究。薄膜沉积将在冷壁、热阶段CVD系统中进行。在该系统中和在表面化学研究过程中形成的薄膜将通过一系列表面和分析技术来表征，以确定其组成、结构和取向关系。这项研究将全面描述氮化铝沉积过程中从前驱体到薄膜的各个步骤，并确定在此过程中控制成分和结构的关键反应步骤。这一信息还可用于设计改进的氮化铝前驱体系统，并可作为其他电子和陶瓷系统化学气相沉积的范例。

This award is made in the Special Projects Office of the Chemistry Division under the Materials Synthesis and Processing Initiative. The research will address the problem of formation of thin films of compound materials by chemical vapor deposition (CVD) from organometallic precursors. The intent is to correlate the basic gas phase and surface chemical behavior of the precursors with the structure and purity of the resulting films, and with the efficiency of precursor conversion to final product. The system to be investigated is the production of AlN films from organoaluminum-ammonia or -amide precursors containing aluminum and nitrogen in the correct stoichiometric ratio. The gas phase and surface chemistry of these precursors will be studied using a combination of mass spectrometry with time-of-flight measurements of product species, and pulsed beam Fourier transform microwave spectroscopy. Thin film deposition will be carried out in a cold-wall, hot-stage CVD system. Films formed in this system and in the course of the surface chemistry studies will be characterized by a range of surface and analytical techniques to determine their composition, structure and orientational relationships. %%% This study will provide a comprehensive picture of the steps leading from precursor to film in AlN deposition, and in the process identify the critical reaction steps controlling composition and structure. This information can also be used in the design of improved precursor systems for AlN as well as serving as a paradigm for the CVD of other electronic and ceramic systems.