Small Grants for Exploratory Research (SGER): Processing Boron and Boron Carbide Thin Films for Protective Coatings and Device Fabrication
Small Grants for Exploratory Research (SGER): Processing Boron and Boron Carbide Thin Films for Protective Coatings and Device Fabrication
批准号:
9222880
负责人:
Peter Dowben
金额:
$2.58万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1992
资助国家:
美国
项目状态:
已结题
起止时间:
1992-11-01 至 1994-10-31
中文摘要
本项目将研究用硼和碳化硼基材料制造微电子器件的可行性。这项研究是基于硼烷在化学气相沉积中选择性沉积硼和碳化硼的初步成功。许多电子器件和电子级防护涂层将使用x射线光刻技术制造。基于碳化硼的半导体器件由于其潜在的高温和耐辐射特性可能引起相当大的兴趣。因此,这种设备可能在极端条件下工作。
英文摘要
This project will study the feasibility of fabricating microelectronic devices from boron and boron carbide-based materials. The research is based on initial success in the selective area deposition of boron and boron carbide by chemical vapor deposition, using boranes. A number of electronic devices and electronic grade protective coatings will be fabricated by using x-ray lithographic techniques. Boron carbide-based semiconductor devices may be of considerable interest, due to their potential high temperature and radiation-resistant properties. As a result, such devices may work under extreme conditions.
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依托单位:
海外基金