Growth of Epitaxial Oxide Films on Silicon

这项研究的目标是展示在加热的单晶硅衬底上通过激光烧蚀高质量的绝缘氧化物薄膜在单晶硅衬底上进行外延生长，然后在绝缘氧化物上进行CVD外延生长。根据最近成功地在硅和砷化镓上外延生长氧化镁、在硅上外延CeO2和在硅上外延生长Pro2的报道，我们建议将重点放在作为候选外延绝缘层的MgO、CeO2和Pro2上。虽然成功的工艺将打开许多应用，但这项工作的目标是实现绝缘体上的硅结构，其中绝缘体是外延生长的。或者，外延氧化膜可以为键合和蚀刻背面绝缘体上的硅工艺提供高度选择性的蚀刻停止。

The goal of the proposed research is to demonstrate epitaxial growth, by laser ablation in a UHV vacuum system of high quality, insulating oxide films onto heated single crystal silicon substrates, followed by CVD epitaxial growth of silicon onto the insulating oxide. Based on recent reports of successful epitaxial growth of MgO on silicon and gallium arsenide, CeO2 on silicon, and PrO2 on silicon, we propose to focus on MgO, CeO2, and PrO2 as the candidate epitaxial insulating layers. Although a successful process would open up many applications, the goal for this work is to enable a silicon-on-insulator structure in which the insulator is grown epitaxially. Alternatively, the epitaxial oxide film may provide a highly selective etch stop for a bond-and-etch-back silicon-on-insulator process.