Giant Magnetoresistance in Multilayers and Single Layer Phase Separating Alloy Films

这项研究的目的是了解 巨磁电阻（GMR）的基本性质显示在 周期性多层膜和单层合金薄膜。 主要 努力是在钴-银多层膜和钴-银多层膜中优化GMR。 溅射合金薄膜。 多图层变量包括图层 厚度、层数、缓冲层材料和退火热 治疗 共溅射膜变量包括钴/银 浓度和溅射压力。 第三元素的影响 添加量有待确定。 结构、磁阻和 一般的磁性能是使用各种 技术. 并着重介绍了巨磁阻效应的计算机模拟 行为使用蒙特卡罗方法的微观结构演变。 %%% 本文对薄膜和多层膜的磁电阻效应进行了研究， 与磁场传感器的发展有关，例如 磁记录技术中的读头。

This goal of this research is to develop an understanding of the fundamental nature of giant magnetoresistance (GMR) displayed in periodic multilayers and single layer alloy thin films. The main effort is on optimizing GMR in cobalt-silver multilayers and co- sputtered alloy films. The multilayer variables include layer thickness, layer number, buffer layer materials, and annealing heat treatment. Co-sputtered film variables include the cobalt/silver concentrations and sputtering pressure. Effects of third elemental additions are to be determined. Structure, magnetoresistance, and general magnetic properties are measured using a variety of techniques. Also emphasized is computer simulation of the GMR behavior using a Monte Carlo approach to microstructural evolution. %%% This research on magnetoresistance in thin films and multilayers is pertinent to the development of magnetic field sensors, such as read heads in magnetic recording technology.