Tunneling Measurements for Electro-Structural Analysis of Ultra-thin Dielectrics on Silicon

9313937农民该项目将探索金属-绝缘体-半导体隧道二极管超薄(3.5 nm)介质层中隧道电流感生缺陷的产生和识别问题。这项工作对目前继续扩大管理信息系统器件结构的规模具有重要意义，并显示了揭示有关缺陷的新信息的前景。新的隧道方法将被用来研究和模拟这些缺陷的动力学、电学和结构特征。既要研究传统的热生长氧化物，也要研究更坚固的新型介电材料。***

9313937 Farmer The project will explore the problems of tunnel-current-induced defect generation and identification in the ultra-thin (3.5nm) dielectric layer of metal-insulator-semiconductor (MIS) tunnel diodes. This work is of current importance to the continued scaling of MIS device structures, and shows promise for revealing new information concerning the defects. Novel tunneling methods will be used to investigate and model the dynamical, electrical and structural characteristics of these defects. Both traditional, thermally grown oxides and new, more robust dielectrics will be studied. ***