Kinetics of Two- and Three-Dimensional Growth at Surfaces
Kinetics of Two- and Three-Dimensional Growth at Surfaces
批准号:
9315691
负责人:
Ian Robinson
金额:
$25.5万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1994
资助国家:
美国
项目状态:
已结题
起止时间:
1994-04-01 至 1997-09-30
中文摘要
罗宾逊9315691 技术摘要:“2+ 1D”生长的动力学与表面外部形状的演变有关。 Kardar、Parisi和Zhang最近提出的一个理论预测了这种动力学的普遍行为。 建议利用表面X射线衍射的最新进展,使用同步辐射,现在允许在时域中的表面和界面的探索。 主要目的是寻找模型系统,提供普遍行为的测试,并了解基本的物理。 用Pb/Cu(100)体系研究了金属基底上简单单分子膜的动力学。 Pd_2Si/Si(III)系统将用于研究在晶体硅化物薄膜形成中由金属与硅之间的反应形成的复杂界面。 非技术摘要:该提案支持一项实验计划,该计划将基于纽约布鲁克海文的国家同步加速器光源。 所使用的光束线是为最先进的表面衍射实验而设计的。 拟议的实验旨在了解表面如何在原子尺度和0.00 l秒的时间尺度上生长的细节。 此外,这项工作将直接应用于理解晶体硅化物薄膜的形成。 这种材料对于半导体互连越来越重要,特别是对于具有超小尺寸的电子器件。 ***
英文摘要
9315691 Robinson Technical abstract: The kinetics of '2+lD' growth relates to the evolution of the external shape of a surface. A universal behavior of this kinetics has been predicted by a recent theory due to Kardar, Parisi and Zhang. It is proposed to capitalize on the recent advances in surface x-ray diffraction using synchrotron radiation which now permit the exploration of surfaces and interfaces in the time domain. The primary aim is to seek out model systems which provide a test of the universal behavior and to understand the underlying physics. The kinetics of a simple monolayer on a metal substrate will be studied using the Pb/Cu(100) system. The Pd2Si/Si (lll) system will be used to study the complex interface formed by the reaction between metals and silicon in the formation of thin films of crystalline silicides. Non-technical abstract: This proposal supports an experimental program that will be based at the National Synchrotron Light Source in Brookhaven, N.Y. The beamline to be used was designed for state-of-the-art diffraction experiments on surfaces. The proposed experiments are aimed at understanding the details of how a surface grows on an atomic scale and on a time scale of 0.00l seconds. In addition, the work will have direct application to understanding the formation of thin films of crystalline silicides. Such materials are increasingly important for semiconductor interconnects, especially for electronic devices with ultrasmall dimensions. ***
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