Cross-Sectional Scanning Probe Microscopy/Spectroscopy of Semiconductor Heterostructures

9402938 Shih首席研究员将利用扫描探针显微镜（STM）的三种形式：扫描隧道显微镜和光谱（STM/S）、尖端诱导发光和基于扫描近场光学显微镜（SNOM）的局部光致发光，研究半导体异质结构的结构、电子和光电子特性及其之间的相关性。这些技术前所未有的空间分辨率使它们成为异质结构界面上这些特性微观研究的理想工具。工作将集中在：(1)波段不连续；(2)冶金可控性；(3)结构缺陷对电子和光电子性能的影响。% % % %该项目将开发新的实验方法来研究两种不同半导体之间界面的物理性质。这项研究将使不同原子在这些界面上的排列直接可视化。更重要的是，这项研究将使人们了解这些原子排列如何影响电子设备中的电子行为和发光特性。研究结果将对下一代计算机和光通信中使用的未来电子设备的发展产生直接的技术影响。＊＊＊

9402938 Shih The Principal Investigator will investigate the structural, electronic and optoelectronic properties of semiconductor heterostructures and the correlation between them by using three forms of scanning probe microscopy (STM): scanning tunneling microscopy and spectroscopy (STM/S), tip-induced luminescence, and localized photoluminescence based on scanning near field optical microscopy (SNOM). The unprecedented spatial resolution of these techniques make them the ideal tools for microscopic investigations of these properties at the heterostructure interfaces. The work will focus on: (1) band discontinuities; (2) metallurgical controllability; and (3) effects of structural defects on the electronic and optoelectronic properties. % % % % This project will develop novel experimental methods to study the physical properties at the interface between two different semiconductors. The study will allow direct visualization of the arrangement of different atoms at such interfaces. More importantly the study will allow one to understand how these atomic arrangements influence the behavior of electrons and the light emitting properties in electronic devices. The results will have immediate technological impact on the development of future electronic devices to be used in the next generation computers and optical communications. ***