A Study of Magnetic Anisotropy in Ultrathin Films

1 9403543白色这项研究的目的是阐明超薄膜和多层膜中磁各向异性的起源。研究的主要载体将是外延铁薄膜和多层和外延Laves相铁/Tb薄膜，它们将通过超高真空溅射沉积在单晶衬底上生长。通过使用合金层或应变层超晶格底层控制外延应变，可以分离出对铁薄膜和多层膜各向异性的各种贡献。Laves相铁/Tb化合物具有巨大的磁致伸缩系数，我们建议利用这一点通过控制外延应变来诱导大的磁各向异性。最后，我们将通过在邻近表面生长磁性薄膜来研究由规则的台阶阵列引起的各向异性。我们看到这些研究对用于信息存储、传感器和致动器技术的磁性薄膜技术产生了重大影响。本课程将提供对磁各向异性的基本了解，磁各向异性是信息存储、传感器和致动器技术中使用的薄膜的重要特征。在这些领域工作的技术人员将利用该计划的结果来设计和制造性能更好的新材料，从而实现更高密度的记录、更灵敏的传感器和更高效的执行器。该计划的一个重要特点是在材料和工艺研究的基础和技术方面对研究生和本科生进行培训。这项研究将有助于提高用于计算、信息处理和远程通信的先进器件和集成电路的综合性能。***

1 9403543 White The purpose of this research is to illuminate the origins of magnetic anisotropy in ultra thin films and multilayers. The primary vehicle for the investigation will be epitaxial Iron thin films and multilayers and epitaxial Laves phase iron/terbium thin films, which will be grown by UHV sputter deposition on single crystal substrates. The various contributions to anisotropy in Iron thin films and multilayers will be isolated through control of epitaxial strain by use of alloy or strained layer superlattice underlayers. The Laves phase iron/terbium compounds are known to have enormous magnetostriction coefficients, and we propose to capitalize on this to induce large magnetic anisotropies through control of epitaxial strain. Finally we will investigate the anisotropy induced by a regular array of steps by growing magnetic films on vicinal surfaces. We see significant impact of these studies on the technology of magnetic thin films for use in the information storage, sensor, and actuator technologies. %%% This program will provide the fundamental understanding of magnetic anisotropy which is an important characteristic of films used in the information storage, sensor and actuator technologies. The results of this program will be used by technologists working in these areas to design and fabricate new materials with improved properties, allowing for higher density recording, more sensitive sensors, and more efficient actuators. An important feature of the program is the training of graduate and undergraduate students in a fundamentally and technologically significant area of materials and processing research. This research will contribute to improving the general perform ance of advanced devices and integrated circuits used in computing, information processing, and tele communica tions. ***