Vertical Isolation for Very Large Scale Integration Circuits Formed by Low Temperature Oxidation of Silicon

9412550将开展阿尔福德研究，以便对与硅化铜接触的硅的低温氧化相关的过程有一个基本的了解。计划：1)研究这种现象的动力学，2)表征氧化层，3)利用生长速率与取向的关系在集成电路中形成垂直隔离氧化物。我们期望通过使用植入的标记来表征生长动力学，以获得激活能、衬底取向、移动物种的一致性以及掺杂和杂质的影响。生长的氧化物的完整性将通过对金属氧化物电容器结构的电测量、成分、密度和杂质的离子束分析以及用于评估微结构特性的透射电子显微镜来量化。%本课程的主要目标是加深对硅与铜硅化物接触时的低温氧化的基本了解。该项目的一个重要特点是对学生进行材料和工艺研究这一具有根本性和技术意义的领域的培训。这项研究将有助于提高用于计算、信息处理和远程通信的先进器件和集成电路的综合性能。***

9412550 Alford Research will be carried out to develop a fundamental understanding of the processes associated with the low temperature oxidation of Silicon in contact with Cu silicide. It is planned to: 1) investigate the kinetics of the phenomena, 2)characterize the oxide layer, and 3)use the orientation dependence on growth rate to form vertical isolation oxides in integrated circuits. We expect to characterize the growth kinetics to obtain activation energy, substrate orientation, identity of moving species through the use of implanted markers, and the influence of dopants and impurities. The integrity of the grown oxide will be quantified by electrical measurements of metal oxide capacitor structures, ion beam analysis of composition, density, and impurities, and transmission electron microscopy to assess microstructure properties. %%% The primary goal of this program is to develop a fundamental understanding of the low temperature oxidation of Silicon in contact with Cu silicide. An important feature of the project is the training of students in a fundamentally and technologically significant area of materials and processing research. This research will contribute to improving the general perform ance of advanced devices and integrated circuits used in computing, information processing, and tele communica tions. ***