Experimental and Modeling Studies of Impurities at Metal/ Organic Vapor Phase Epitaxy-Grown Interfaces

9414334 Kuech研究将进行，以获得杂质对金属有机气相外延（MOVPE）生长界面的性质和原子级结构的影响的基本理解。 杂质的详细结构和性能的接口上的作用在很大程度上是未开发的MOVPE技术，尽管该领域的发展的纳米结构和异质结构器件的重要性，由于缺乏相结合的实验研究和相关的建模所观察到的相互作用。 通过紧密耦合的实验和建模工作，界面或表面结构与杂质的掺入和行为之间的相互作用将在本研究项目中确定。 我们将使用一个全面的方法，其中包括含杂质的前体的化学性质以及表面结构的变化。 这些实验研究将得到补充和支持的化学和结构的发展中的增长前沿的建模工作。 几个互补的建模技术将被使用，包括现实的连续描述流体流动，传热和传质结合详细的气相和表面化学动力学机制和杂质改性MOVPE生长的唯象模型。 该计划的主要目标是发展的外延生长，加工和化合物半导体材料的性能的基本理解，使他们可以充分利用各种先进的电子和光子器件的实现。 这些研究的结果将导致更好地了解与电子/光子材料的一系列生长和加工技术相关的基本界面和生长过程。 该计划的一个重要特点是在材料和加工研究的基本和技术重要领域培养研究生和本科生。 这项研究将有助于提高先进器件和集成电路在计算、信息处理和电信领域的综合性能。 ***

9414334 Kuech Research will be carried out to obtain a fundamental understanding of the influence of impurities on the properties, and atomic level structure of metallo-organic vapor phase epitaxy(MOVPE) grown interfaces. The role of impurities on the detailed structure and properties of interfaces has been largely unexplored in the MOVPE technique, despite the importance of this area to the development of nanostructure and heterostructure devices, due to the lack of combined experimental studies and the related modeling of the observed interactions. Through a tightly coupled experimental and modeling effort, the interplay between the interface or surface structure and impurity incorporation and behavior will be identified in this research project. We will use a comprehensive approach which includes changes in the chemical nature of the impurity containing precursor as well as the surface structure. These experimental studies will be complemented and supported by modeling efforts of the chemistry and structure of the developing growth front. Several complementary modeling techniques will be used including realistic continuum descriptions of fluid flow, heat and mass transfer combined with detailed gas phase and surface chemical kinetic mechanisms and phenomenological models of impurity modified MOVPE growth. %%% The primary goal of this program is to develop a fundamental understanding of the epitaxial growth, processing, and properties of compound semiconductor materials so that they can be fully exploited in the realization of a variety of advanced electronic and photonic devices. The findings of these studies will lead to a better understanding of the basic interface and growth processes relevant to a range of growth and processing techniques for electronic/photonic materials. An important feature of the program is the training of graduate and undergraduate students in a fundamentally and technologically significant area of materials and processing research. This research will contribute to improving the general perform ance of advanced devices and integrated circuits used in computing, information processing, and tele communica tions. ***