Experimental and Modeling Studies of the MOVPE (MetalorganicVapor Phase Epitaxy) Process
MOVPE(金属有机气相外延)工艺的实验和建模研究
基本信息
- 批准号:9106633
- 负责人:
- 金额:$ 41.02万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Continuing Grant
- 财政年份:1991
- 资助国家:美国
- 起止时间:1991-09-15 至 1995-09-30
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
This project addresses atomic level details of chemical reactions, transport phenomena, and epitaxial crystal growth underlying metalorganic vapor phase epitaxy(MOVPE) of advanced III-V compound semiconductor structures. Major emphasis is placed on basic studies of doping and contaminant processes for improved understanding and controllability. A systematic experimental and computer simulation approach is being taken to address these issues. Fundamental details of carbon and zinc doping of gallium arsenide during MOVPE as a function of primary epitaxy growth variables as well as mapping of doping uniformity will be carried out. MOVPE has become a premier technique for the growth of compound semiconductors, but the limited uniformity and the control of electrical properties of such material restricts the general applicability of the method and has limited its utilization for advanced electronic and optoelectronic device and circuit development. The basic studies being pursued on this project will provide additional fundamental information at the atomic level critical to the understanding and utilization of MOVPE, and thus, will have important technological benefits to the field of microelectronics as well as to our basic scientific knowledge base.
该项目解决先进 III-V 族化合物半导体结构的金属有机气相外延 (MOVPE) 基础上的化学反应、输运现象和外延晶体生长的原子级细节。 主要重点放在掺杂和污染物过程的基础研究上,以提高理解和可控性。 正在采取系统的实验和计算机模拟方法来解决这些问题。 将进行 MOVPE 期间砷化镓碳和锌掺杂的基本细节作为初级外延生长变量的函数以及掺杂均匀性的映射。 MOVPE 已成为化合物半导体生长的主要技术,但此类材料的均匀性和电性能控制有限,限制了该方法的普遍适用性,并限制了其在先进电子和光电器件及电路开发中的应用。 该项目正在进行的基础研究将提供对理解和利用 MOVPE 至关重要的原子水平的额外基础信息,因此将为微电子领域以及我们的基础科学知识库带来重要的技术效益。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Thomas Kuech其他文献
MOCVD-Grown In0.22Ga0.78As Metamorphic Buffer Layer with Ultralow Threading Dislocation Density
MOCVD 生长的具有超低螺纹位错密度的 In0.22Ga0.78As 变质缓冲层
- DOI:
- 发表时间:
2024 - 期刊:
- 影响因子:0
- 作者:
Honghyuk Kim;Shining Xu;Cheng Liu;Kaddour Lekhal;Thomas Kuech;Luke Mawst - 通讯作者:
Luke Mawst
Thomas Kuech的其他文献
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{{ truncateString('Thomas Kuech', 18)}}的其他基金
New Chemical Pathways to the Growth of Complex Oxide Films for Nonlinear Photonics
用于非线性光子学的复杂氧化膜生长的新化学途径
- 批准号:
0505775 - 财政年份:2005
- 资助金额:
$ 41.02万 - 项目类别:
Continuing Grant
XYZ on a Chip: Compact and Integrated Chemical Sensors for Aqueous Analytes Based on Surface Modifaction of Semiconductors
XYZ 芯片:基于半导体表面改性的紧凑型集成化学传感器,用于水性分析物
- 批准号:
9980758 - 财政年份:1999
- 资助金额:
$ 41.02万 - 项目类别:
Continuing Grant
Chemical Sensors for CVD Processing
用于 CVD 处理的化学传感器
- 批准号:
9810176 - 财政年份:1998
- 资助金额:
$ 41.02万 - 项目类别:
Standard Grant
Materials Research Science and Engineering Center on Nanostructured Materials and Interface
纳米结构材料与界面材料研究科学与工程中心
- 批准号:
9632527 - 财政年份:1996
- 资助金额:
$ 41.02万 - 项目类别:
Cooperative Agreement
Experimental and Modeling Studies of Impurities at Metal/ Organic Vapor Phase Epitaxy-Grown Interfaces
金属/有机气相外延生长界面杂质的实验和建模研究
- 批准号:
9414334 - 财政年份:1994
- 资助金额:
$ 41.02万 - 项目类别:
Continuing Grant
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