Experimental and Modeling Studies of the MOVPE (MetalorganicVapor Phase Epitaxy) Process

本项目涉及先进III-V型化合物半导体结构的金属有机气相外延（MOVPE）下的化学反应、输运现象和外延晶体生长的原子水平细节。主要重点放在掺杂和污染过程的基础研究，以提高理解和可控性。正在采取系统的实验和计算机模拟方法来解决这些问题。在MOVPE过程中，砷化镓的碳和锌掺杂的基本细节作为初级外延生长变量的函数以及掺杂均匀性的映射将被进行。MOVPE已成为化合物半导体生长的首要技术，但这种材料的有限均匀性和电性能控制限制了该方法的普遍适用性，并限制了其在先进电子和光电子器件和电路开发中的应用。本项目所进行的基础研究将在原子水平上提供对理解和利用MOVPE至关重要的额外基础信息，因此，将对微电子领域以及我们的基础科学知识库产生重要的技术效益。

This project addresses atomic level details of chemical reactions, transport phenomena, and epitaxial crystal growth underlying metalorganic vapor phase epitaxy(MOVPE) of advanced III-V compound semiconductor structures. Major emphasis is placed on basic studies of doping and contaminant processes for improved understanding and controllability. A systematic experimental and computer simulation approach is being taken to address these issues. Fundamental details of carbon and zinc doping of gallium arsenide during MOVPE as a function of primary epitaxy growth variables as well as mapping of doping uniformity will be carried out. MOVPE has become a premier technique for the growth of compound semiconductors, but the limited uniformity and the control of electrical properties of such material restricts the general applicability of the method and has limited its utilization for advanced electronic and optoelectronic device and circuit development. The basic studies being pursued on this project will provide additional fundamental information at the atomic level critical to the understanding and utilization of MOVPE, and thus, will have important technological benefits to the field of microelectronics as well as to our basic scientific knowledge base.