Chemical Sensors for CVD Processing

用于 CVD 处理的化学传感器

• 批准号: 9810176
• 负责人: Thomas Kuech
• 金额: $ 31.33万
• 依托单位: University of Wisconsin-Madison
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1998
• 资助国家: 美国
• 起止时间: 1998-08-15 至 2002-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9810176&HistoricalAwards=false
• 关键词: Chemical; Sensors; CVD; Processing

ABSTRACT Proposal Title: Chemical Sensors for CVD Processing Proposal Number: CTS-9810176 Principal Investigator: Arthur B. Ellis and Thomas F. Kuech Institution: U. Wisconsin - Madison The proposed research objective is to attain better physicochemical understanding of the interfaces between doped II-VI and III-V semiconductor surfaces and chemisorbed gases of III-VI compound semiconductor precursors. Prior work demonstrated that the semiconductor photoluminescence can be made more or less sensitive and selective with respect to adsorbate by appropriate surface passivation or modification. This work will produce a description of surface bonding and Fermi level of the substrate upon exposure of GaAs to SeS2, and structural changes of CdSe upon adsorption of silapentanes. Techniques to be used include photoreflectance spectroscopy, synchrotron IR absorption to detect Fermi level changes, and scanning probe microscopy. Surface modification will be performed with metalloporphyrin films, bifunctional molecules like phenylenediamine and dendrimers, and also by molecular imprinting by polymerization around analyte molecules. Heterostructures produced by MO-CVD will consist of ZnSe atop GaAs and CdSe atop GaSb. The buried interfaces will characterized from the photoluminescence response. Practical sensors will be tested for the gases adsorbed during the metallo-organic vapor phase epitaxy process. The Chemistry-Chemical Engineering collaboration has a strong influence both on the research and the educational impacts of this work. The immediate applicability of these fundamental results to CVD gas detection can be extended to the detection of hazardous gases, explosives, and food quality.

提案题目：CVD加工的化学传感器提案号：CTS-9810176首席研究员：Arthur B. Ellis和Thomas F. Kuech机构：U. Wisconsin - Madison提议的研究目标是更好地了解掺杂II-VI和III-V半导体表面与III-VI化合物半导体前体的化学吸附气体之间的界面的物理化学性质。先前的工作表明，通过适当的表面钝化或修饰，半导体光致发光可以或多或少地对吸附质的敏感和选择性。这项工作将描述砷化镓暴露于SeS2时衬底的表面键合和费米能级，以及吸附硅戊烷后CdSe的结构变化。使用的技术包括光反射光谱，同步加速器红外吸收来检测费米能级的变化，以及扫描探针显微镜。表面修饰将通过金属卟啉薄膜、双功能分子如苯二胺和树状大分子进行，也可以通过在分析物分子周围聚合的分子印迹进行。MO-CVD生成的异质结构将由GaAs顶部的ZnSe和GaSb顶部的CdSe组成。埋藏界面将通过光致发光响应来表征。实用的传感器将测试在金属有机气相外延过程中吸附的气体。化学-化学工程的合作对这项工作的研究和教育影响都有很大的影响。这些基本结果对CVD气体检测的直接适用性可以扩展到有害气体，爆炸物和食品质量的检测。