Structure, Reactivity, and Models of the Silicon/Silicon Dioxide Interface

9420558霍尔这项研究的重点是更好地理解硅/氧化硅界面的原子尺度结构以及在该界面上发生的化学反应。为了实现这些目标，开发了使结构明确的硅/二氧化硅界面作为模型光谱系统的方法。所合成的模型界面提供了出色的测试系统，可用于在解释从标准热氧化物界面收集的数据时使用的假设和分配，标准热氧化物界面是大多数微电子设备的基本组件。从固体结构的先验控制的角度来看，正在合成的界面也很有趣。提出了化学调谐界面和形成亚稳态氧化硅薄膜的合成方法。使用表面科学技术分析薄膜的逐步形成避免了固体化学的前驱物质的常见问题，从形成的固体中获得有意义的分析数据。晶态和非晶态二氧化硅之间的界面在微电子器件中起着至关重要的作用，40多年来一直是人们密切研究的对象。信息和通信技术的进步与更好的材料制备方法的发展直接相关。随着氧化硅薄膜的尺寸从大约1000埃缩小到50-100安，设计和了解界面层的组成变得至关重要。这项研究的重点是更好地了解硅/氧化硅界面的原子尺度结构以及在该界面上发生的化学反应。

9420558 Holl This research is focused on developing a better understanding of the atomic scale structure of the silicon/silicon oxide interface and the chemical reactions which occur at this interface. To accomplish these goals, methods are developed for making silicon/silicon oxide interfaces of well-defined structure to serve as model spectroscopic systems. The model interfaces synthesized provide excellent test systems for crHically examining the assumptions and assignments used when interpreting data collected from standard themmal oxide interfaces, an essential component of most microelectronic devices. The interfaces being synthesized are also interesting from the perspective of a priori control of solid structure. Synthetic methods are proposed which allow chemical tuning of the interface and formation of metastable thin films of silicon oxide. Analysis of the stepwise formation of a film using surface science techniques avoids a common problem of precursor to solids chemistry, obtaining meaningful analytical data from the solid formed. %%% The interface between crystalline and amorphous silicon dioxide plays a critical role in microelectronic devices and has been the subject of intense research for over 40 years. Advances in information and communications have been directly coupled with the development of better methods of materials preparation. As silicon oxide film dimensions shrink from about 1000 to 50-100 A, design and understanding of the composition of the interface layer becomes of critical importance. This research is focused on developing a better understanding of the atomic scale structure of the silicon/silicon oxide interface and the chemical reactions which occur at this interface.