Semiconductor Physics and Photonics

9421517吉布斯这是光波技术研究半导体物理和光子学的更新建议。该方法是使用Riber分子束外延设备生长III-V半导体异质结，适当时通过光刻和反应离子刻蚀将其制备成器件，并利用包括飞秒动力学和强磁场在内的线性和非线性光学光谱研究其光学性质。该提案集中在四个领域：垂直腔面发射激光器(VCSEL)；非线性光学材料、非线性光学开关；以及掺Er半导体。前三个领域是目前拨款下研究的延伸，而第四个领域是一个新的方向。***

9421517 Gibbs This is a renewal proposal for Lightwave Technology research on semiconductor physics and photonics. The approach is to grow III-V semiconductor heterostructures using a Riber MBE machine, where appropriate to fabricate them into devices by photolithography and reactive ion etching, and to study their optical properties by linear and nonlinear optical spectroscopies including femtosecond dynamics and high magnetic fields. The proposal concentrates on topics in four areas: vertical-cavity surface-emitting lasers (VCSEL's); nonlinear optical materials, nonlinear optical switches; and Er-doped semiconductors. The first three areas are extensions of research under the current grant, whereas the fourth is a new direction. ***