CAREER: Nanometer-scale Characterization and Fabrication of Semiconductor Heterostructures and Devices

用横断面扫描隧道显微镜研究了半导体异质结构的原子尺度结构和电子性质。采用分子束外延法制备了半导体表面，并在原子尺度上研究了其生长过程。用Si/SiGeC异质结构制造的mosfet和器件将与工业合作进行检查，重点是特征尺寸接近100 nm。教育活动将涉及跨学科课程的开发，将物理、生物和化学领域与电气工程结合起来。＊＊＊

9501469 Yu Atomic Scale studies of structure and electronic properties in semiconductor heterostructures are investigated with cross-sectional scanning tunneling microscopy. the semiconductor surfaces are prepared with molecular beam epitaxy and the growth processes are studied at the atomic scale. MOSFETs and devices fabricated with Si/SiGeC heterostructures are to be examined, in collaboration with industry, with emphasis on feature sizes approaching 100 nm. The educational activities will involve the development of interdisciplinary courses which bring together the fields of physics, biology and chemistry with electrical engineering. ***