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SBIR PHASE II: A High-Energy Electron Injector for X-ray Chip Lithography and Microfabrication

SBIR PHASE II: A High-Energy Electron Injector for X-ray Chip Lithography and Microfabrication
SBIR PHASE II:用于 X 射线芯片光刻和微加工的高能电子注入器
批准号:
9529825
负责人:
David U. Yu
金额:
$29.08万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1996
资助国家:
美国
项目状态:
已结题
起止时间:
1996-10-01 至 1998-09-30

项目摘要

项目成果

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中文摘要
翻译
9529825 Yu这个小型企业创新研究第二阶段项目探索了一种紧凑、高梯度的电子直线加速器,作为多端口、高通量、同步加速器X射线辐射存储环的注入器。该设备将用于制造微电子芯片和微电子机械系统(MEMS)的X射线光刻机。第一阶段生产了一种紧凑的全能量注入器设计,与超导存储环X射线源很好地匹配。脉冲隔膜和Kicker磁铁也被设计用于全能量注射。第二阶段将提出X射线源系统的详细设计,并使用新的注入方案对紧凑型环中存储和维护的高电流进行模拟测试。在同时进行的第三阶段开发中,在私营部门的资助下,将建造一种新的全能源、高梯度喷油器的商业原型。通过分包给新泽西州卡特雷特的牛津仪器公司,第二阶段还将改装一个Helios 2超导环,以进行全能量注入。新一代高通量X射线光刻机的潜在商业应用有望在特征尺寸小于0.18微米的光刻中实现。预计这将使微电子行业在质量和生产率方面实现重大扩张。新的注入技术也可以应用于MEMS微制造,预计MEMS微制造也将大幅增长。
英文摘要
9529825 Yu This Small Business Innovation Research (SBIR) Phase II project explores a compact, high-gradient electron linear accelerator as an injector to a multiport, high-throughput, synchrotron X-ray radiation storage ring. The device will be used in X-ray lithography machines for manufacture of microelectronic chips and microelectromechanical systems (MEMS). Phase I produced a compact design for a full-energy injector that matches well to a superconducting storage ring X-ray source. A pulsed septum and kicker magnet were also designed for use with full-energy injection. Phase II will produce a detailed design of the X-ray source system and run simulation tests of high current stored and maintained in the compact ring using the new injection scheme. In concurrent Phase III development, under private-sector funding, a commercial prototype of a new full-energy, high-gradient injector will be built. By subcontract to Oxford Instruments of Carteret, NJ, Phase II will also modify a Helios 2 superconducting ring for full-energy injection. Potential commercial applications are expected in a new generation of high-throughput X-ray machines for lithography at feature sizes finer than 0.18 micron. This is expected to enable a major expansion in quality and productivity of the microelectronics industry. The new injection technology can also be adapted to MEMS microfabrication, which is also expected to grow significantly.
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会议论文
SBIR Phase I: Microfabrication of Planar Accelerating Structures for High-Frequency Electron Linear Accelerators
  • 批准号:
    9661539
  • 项目类别:
    Standard Grant
  • 资助金额:
    $7.5万
  • 财政年份:
    1997
  • 负责人:
    David U. Yu
  • 依托单位:
A High-Gradient Electron Injector for X-Ray Chip Lithography and Microfabrication
  • 批准号:
    9461156
  • 项目类别:
    Standard Grant
  • 资助金额:
    $7.5万
  • 财政年份:
    1995
  • 负责人:
    David U. Yu
  • 依托单位:
A Compact Electron Injector for an X-Ray Lithography Ring
  • 批准号:
    9060668
  • 项目类别:
    Standard Grant
  • 资助金额:
    $5.0万
  • 财政年份:
    1991
  • 负责人:
    David U. Yu
  • 依托单位:
国内基金
海外基金
Baryogenesis, Dark Matter and Nanohertz Gravitational Waves from a Dark Supercooled Phase Transition
  • 批准号:
    24ZR1429700
  • 项目类别:
    省市级项目
  • 资助金额:
    --
  • 批准年份:
    2024
  • 负责人:
    YUICHIRO NAKAI
  • 依托单位:
ATLAS实验探测器Phase 2升级
  • 批准号:
    11961141014
  • 项目类别:
    国际(地区)合作与交流项目
  • 资助金额:
    3350万元
  • 批准年份:
    2019
  • 负责人:
    刘衍文
  • 依托单位:
地幔含水相Phase E的温度压力稳定区域与晶体结构研究
  • 批准号:
    41802035
  • 项目类别:
    青年科学基金项目
  • 资助金额:
    12.0万元
  • 批准年份:
    2018
  • 负责人:
    张里
  • 依托单位:
基于数字增强干涉的Phase-OTDR高灵敏度定量测量技术研究