Ballistic Electron Emission Spectroscopy and Microscopy Studies of Heterojunction Band Offsets and Local Electronic Transport

9531133 Narayanamurti最近在圣巴巴拉开发的一种独特的变温弹道电子发射显微镜（BEEM）将用于对GaInP/GaAs和Al GaN/GaN中新型化合物半导体异质结构和量子威尔斯的局部电子能带结构和输运进行首次空间研究。 这两种材料系统对光电器件具有重要的技术意义，UCSB在这一领域有很强的电子材料和器件工作。 然而，重要的电子参数的基础知识，如异质结带偏移，要么是了解甚少（GaInP\GaAs）或未知（A1 GaN/GaN）。 UCSB在原型A1 xG 1-xAs/GaAs系统中的初步BEEM研究最近显示了BEEM在空间上掩埋在肖特基势垒下方的半导体异质结构的光谱学方面的能力，并使我们对该技术用于探测新材料系统的潜力充满信心 使用BEEM的这种研究以前从未做过。 预计这项工作的结果将产生具体的宝贵信息，这将导致量子异质结构中的传输的理解，并将使技术上重要的（迄今为止知之甚少）半导体材料的局部规模的表征。 ***

9531133 Narayanamurti A unique, variable temperature, Ballistic Electron Emission Microscope (BEEM) recently developed at Santa Barbara will be used to perform the first spatial studies of local electronic band structure and transport of novel compound semiconductor heterostructures and quantum wells in GaInP/GaAs and A1GaN/GaN. Both of these materials systems have great technological importance for optoelectronic devices, and there is a strong electronic materials and device effort at UCSB in this area. Yet the fundamental knowledge of important electronic parameters, such as heterjunction band offsets, is either poorly understood (GaInP\GaAs) or unknown (A1GaN/GaN). Initial BEEM studies at UCSB in the prototypical A1xG1-xAs/GaAs system have very recently shown the power of BEEM to perform spectroscopy of semiconductor heterostructures buried spatially below the Schottky barrier and gives us confidence in the potential of the technique for probing new materials systems Such studies using BEEM have never been done before. It is anticipated that the results of this undertaking will yield a concrete body of invaluable information which will lead to understanding of transport in quantum heterostructures, and will enable the characterization of technologically important (and heretofore poorly understood) semiconductor materials on a local scale. ***