MRI: Equipment Development: Development of Advanced Scanning Probe Techniques for Spintronics and Nanodevice Research
MRI:设备开发:用于自旋电子学和纳米器件研究的先进扫描探针技术的开发
基本信息
- 批准号:0320654
- 负责人:
- 金额:$ 38.4万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2003
- 资助国家:美国
- 起止时间:2003-08-01 至 2007-07-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Intellectual MeritScanning Probe Microscopy (STM, AFM, BEEM etc) has revolutionized the way we visualize and manipulate individual atoms, chemical bonds, and electron waves. A successful development of a new technique and instrument that can enable us to visualize and manipulate magnetic states and even a single spin would clearly be another great milestone in device and materials research. An STM is just a two terminal device but the investigation of spin-dependent nanoscale transport phenomenon, similar to transistor action, requires a three terminal device arrangement. Here we propose to construct a dual-probe scanning tunneling microscope operating in a low temperature, high magnetic field and ultra high vacuum environment. Such an instrument not only maintains independent scanning capability but also is capable of positioning the two tips (electrodes) at nanoscale distances and desired locations, forming a nano-scale three-terminal device with the specimen. Using spin polarized STM tips, this instrument will enable us to inject, detect and manipulate both charges and spins with the controllability down to the atomic scale. It should enable many new experiments including but not limited to: (a) mapping local spin polarization in a dilute magnetic semiconductor based on the Zeeman splitting of the energy spectra of an electron in a high magnetic field; (b) investigating spin injection from a ferromagnetic metal into a semiconductor using a dual tip BEEM; (c) demonstrations of spin FET devices;These studies should enable deeper fundamental understanding of ferromagnetism in semiconductors and other device materials, provide guidance for improving materials performance such as higher Curie temperature and long mean free path for spin coherent carriers, and enable development of novel device concepts based on spin degrees of freedom, in addition to charge degrees of freedom. The unique and powerful capabilities of the proposed instrument cannot be achieved by any current conventional SPM instrument or lithographical fabrication technique.Broader ImpactIt will attract and enable the undergraduate, graduate students, and postdoctoral fellows to explore the most forefront nanoscale device and materials physics, particularly spintronics. This proposed research involves a broad set of experimental skills and should provide a rather special opportunity for training the next generation of experimental physicists and engineers.
扫描探针显微镜(STM,AFM,BEEM等)已经彻底改变了我们可视化和操纵单个原子,化学键和电子波的方式。一种新技术和仪器的成功开发,使我们能够可视化和操纵磁状态,甚至是单个自旋,显然将是器件和材料研究的另一个伟大里程碑。STM只是一个两端器件,但研究自旋相关的纳米级传输现象,类似于晶体管的作用,需要一个三端器件的安排。在这里,我们建议建立一个双探针扫描隧道显微镜工作在低温,高磁场和超高真空环境。这样的仪器不仅保持独立的扫描能力,而且能够将两个尖端(电极)定位在纳米级的距离和所需的位置,形成一个纳米级的三端装置与标本。利用自旋极化STM针尖,这台仪器将使我们能够注入,检测和操纵电荷和自旋的可控性下降到原子尺度。它将使许多新的实验成为可能,包括但不限于:(a)基于强磁场中电子能谱的塞曼分裂来绘制稀磁半导体中的局部自旋极化;(B)使用双尖端BEEM来研究从铁磁金属到半导体中的自旋注入;(c)自旋FET器件的演示;这些研究将使人们对半导体和其他器件材料中的铁磁性有更深的基本认识,为提高材料性能提供指导,例如提高居里温度和自旋相干载流子的长平均自由程,并且能够开发基于自旋自由度以及电荷自由度的新颖器件概念。该仪器独特而强大的性能是目前任何传统的SPM仪器或光刻制造技术所无法实现的,它将吸引并使本科生、研究生和博士后研究员能够探索最前沿的纳米器件和材料物理,特别是自旋电子学。这项拟议的研究涉及广泛的实验技能,应该为培训下一代实验物理学家和工程师提供一个相当特殊的机会。
项目成果
期刊论文数量(0)
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Venkatesh Narayanamurti其他文献
Urban waste to energy recovery assessment simulations for developing countries
- DOI:
10.1016/j.worlddev.2020.104949 - 发表时间:
2020-07-01 - 期刊:
- 影响因子:
- 作者:
Afreen Siddiqi;Masahiko Haraguchi;Venkatesh Narayanamurti - 通讯作者:
Venkatesh Narayanamurti
The influence of extractives on some properties of wood
- DOI:
10.1007/bf00411739 - 发表时间:
1959-01-01 - 期刊:
- 影响因子:2.400
- 作者:
J. L. Chopra;R. C. Gupta;Venkatesh Narayanamurti - 通讯作者:
Venkatesh Narayanamurti
A framework and methodology for analyzing technology spillover processes with an application in solar photovoltaics
分析技术溢出过程及其在太阳能光伏发电中的应用的框架和方法
- DOI:
10.1016/j.technovation.2024.103048 - 发表时间:
2024 - 期刊:
- 影响因子:12.5
- 作者:
Sergey Kolesnikov;A. Goldstein;Bixuan Sun;Gabriel Chan;Venkatesh Narayanamurti;L. D. Anadón - 通讯作者:
L. D. Anadón
Engineering research: An underinvested-in weak link in the energy innovation ecosystem
- DOI:
10.1557/mrs.2017.281 - 发表时间:
2017-12-08 - 期刊:
- 影响因子:4.900
- 作者:
Venkatesh Narayanamurti - 通讯作者:
Venkatesh Narayanamurti
Influence of loading on the rigidity modulus and plastic flow of wood
- DOI:
10.1007/bf03184645 - 发表时间:
1958-03-01 - 期刊:
- 影响因子:2.400
- 作者:
D. Narayanamurti;R. C. Gupta;Venkatesh Narayanamurti - 通讯作者:
Venkatesh Narayanamurti
Venkatesh Narayanamurti的其他文献
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{{ truncateString('Venkatesh Narayanamurti', 18)}}的其他基金
Workshop: Engineering Education in the 21st Century; Honolulu, Hawaii; June 22, 2009
研讨会:21世纪的工程教育;
- 批准号:
0934029 - 财政年份:2009
- 资助金额:
$ 38.4万 - 项目类别:
Standard Grant
Novel 2D Patterned Quantum Devices from Energetic Beam Processing
来自高能束处理的新型 2D 图案化量子器件
- 批准号:
0701417 - 财政年份:2007
- 资助金额:
$ 38.4万 - 项目类别:
Standard Grant
Growth and Characterization of Nitride Based Nanowire Heterostructures
氮化物基纳米线异质结构的生长和表征
- 批准号:
0322720 - 财政年份:2003
- 资助金额:
$ 38.4万 - 项目类别:
Continuing Grant
Ballistic Electron Emission Luminescence and Microscopy for Complementary Optical and Electronic Characterization of Buried III-V Semiconductor Heterostructures on the Local Scale
弹道电子发射发光和显微镜在局部尺度上对掩埋 III-V 族半导体异质结构进行互补光学和电子表征
- 批准号:
9906047 - 财政年份:1999
- 资助金额:
$ 38.4万 - 项目类别:
Standard Grant
Ballistic Electron Emission Spectroscopy and Microscopy Studies of Heterojunction Band Offsets and Local Electronic Transport
异质结能带偏移和局部电子输运的弹道电子发射光谱和显微镜研究
- 批准号:
9996093 - 财政年份:1998
- 资助金额:
$ 38.4万 - 项目类别:
Continuing Grant
Ballistic Electron Emission Spectroscopy and Microscopy Studies of Heterojunction Band Offsets and Local Electronic Transport
异质结能带偏移和局部电子输运的弹道电子发射光谱和显微镜研究
- 批准号:
9531133 - 财政年份:1996
- 资助金额:
$ 38.4万 - 项目类别:
Continuing Grant
Ballistic Electron Emission Spectroscopy of Heterostructures Using Metal and Degenerately-Doped Semiconductor Tips
使用金属和简并掺杂半导体尖端的异质结构弹道电子发射光谱
- 批准号:
9313610 - 财政年份:1993
- 资助金额:
$ 38.4万 - 项目类别:
Standard Grant
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