Ballistic Electron Emission Spectroscopy of Heterostructures Using Metal and Degenerately-Doped Semiconductor Tips

使用金属和简并掺杂半导体尖端的异质结构弹道电子发射光谱

• 批准号: 9313610
• 负责人: Venkatesh Narayanamurti
• 金额: $ 5万
• 依托单位: University of California-Santa Barbara
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1993
• 资助国家: 美国
• 起止时间: 1993-09-01 至 1995-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9313610&HistoricalAwards=false
• 关键词: Ballistic; Electron; Emission; Spectroscopy; Heterostructures

9313610 Narayanamurti A unique variable temperature, ultra high vacuum (UHV) compatible Ballistic Electron Emission Microscope (BEEM) apparatus is currently under development in the PI's laboratory. This exploratory proposal is directed at fabricating tips for the BEEM to perform spectroscopy on quantum semiconductor heterostructures and superlattices. Properly prepared, heavily doped, semiconductor tips should cause a sharply focused and monoenergetic beam of electrons or holes to be injected into the sample under study. The ability to perform variable temperature UHV studies using BEEM spectroscopy could lead to the observation of quantum mechanical tunneling and interface reflection effects, local determination of dopant density, minority carrier mean free paths, and single particle charging effects (Coulomb blockade regime) with possibly the first studies of discrete light emission from the dimensionally confined pn junction. Development of this technique will be particularly important for the spectroscopic study of dimensionally small systems such as nano-scale wires, quantum dots, resonant tunneling devices and narrow bandgap infrared detectors. %%% A unique variable temperature, ultra high vacuum (UHV) compatible Ballistic Electron Emission Microscope (BEEM) apparatus is currently under development in the PI's laboratory. This exploratory proposal is directed at fabricating probes for the BEEM to perform spectroscopy on complex semiconductor structures. Properly prepared, heavily doped, semiconductor probes should cause a sharply focused and monoenergetic beam of electrons or holes to be injected into the sample under study. The ability to perform variable temperature UHV studies using BEEM spectroscopy would provide valuable physical measurements and could lead to a better understanding of the electronic states in so-called quantum dots and semiconductor heterostructures and superlattices. It is clear that such studies become increasingly important as characteristic dimensions of semiconductor devices approach the nano-meter scale regime. ***

9313610 Narayanamurti PI实验室目前正在开发一种独特的变温、超高真空（UHV）兼容弹道电子发射显微镜（BEEM）设备。 这个探索性的建议是针对制造尖端的BEEM进行光谱的量子半导体异质结构和超晶格。经过适当准备的、重掺杂的半导体尖端应该能使一束聚焦的、单能的电子或空穴注入到所研究的样品中。使用BEEM光谱进行变温超高真空研究的能力可能会导致量子力学隧道效应和界面反射效应的观察，掺杂剂密度的局部测定，少数载流子平均自由程，和单粒子充电效应（库仑阻塞制度）可能是第一次研究离散光发射从尺寸限制的pn结。这种技术的发展将是特别重要的光谱研究的尺寸小的系统，如纳米尺度线，量子点，共振隧穿器件和窄带红外探测器。 PI的实验室目前正在开发一种独特的变温、超高真空（UHV）兼容的弹道电子发射显微镜（BEEM）设备。 这一探索性的建议是针对制造探头的BEEM进行光谱复杂的半导体结构。 经过适当准备的重掺杂半导体探针应能使电子或空穴的单能束被注入所研究的样品中。使用BEEM光谱进行变温UHV研究的能力将提供有价值的物理测量，并可能导致更好地理解所谓的量子点和半导体异质结构和超晶格中的电子态。显然，随着半导体器件的特征尺寸接近纳米尺度，此类研究变得越来越重要。 ***