Acquisition of a Dynamic Secondary Ion Mass Spectrometer for Materials Research

9703930克雷默该奖项为基于四极杆质量分析仪的动态二次离子质谱仪（西姆斯）的采购提供支持，用于材料研究。它将安装在加州大学圣巴巴拉（UCSB）材料研究科学与工程中心（MRSEC）的电子显微镜和微量分析设施中，并将开放给UCSB和全国MRSEC系统的所有合格用户使用。所选仪器针对聚合物和陶瓷等绝缘样品的深度分析进行了优化，但也可满足半导体的大多数深度分析需求。它配备了一个旋转附件，用于提高远低于表面的界面处的深度分辨率，以及一个液氮冷却样品台附件，这将使在室温下熔融的聚合物的深度剖面成为可能。除了标准的双等离子体离子源（用于氧或氩离子）外，还将获得铯离子源。虽然O2+或AR+束是聚合物深度剖析的理想选择，但Cs+束最适合深度剖析半导体中的许多元素。该仪器的获得将为研究聚合物薄膜中的相分离、有序嵌段共聚物体系中的短程扩散、通过化学反应将聚合物链接枝到聚合物/聚合物界面、本发明涉及抗水中重构的半氟化侧基嵌段共聚物表面的结构，以及由水溶性嵌段组成的共聚物制成的防粘涂层的结构，非水溶性玻璃状嵌段，并用于监测热熔性粘合剂中表面之间分子桥的形成。虽然该仪器将对聚合物表面和界面的研究产生特殊的影响，但它对研究氧化物外延薄膜和陶瓷扩散中杂质水平的研究人员也具有很大的价值。此外，动态西姆斯将使金属有机化学气相沉积（MOCVD）和分子束外延（MBE），以及在这些系统中的光电器件的多量子阱结构的氮化物生长的表征大大改善。Mn离子注入GaAs磁性半导体中Mn的西姆斯深度分布将为这些激发材料的纳米结构提供重要信息。西姆斯的测定将为分子束外延生长的垂直腔半导体激光器结构、化合物半导体层中的非化学计量比和AlAs层中的氧化物分布提供关键信息。此外，动态西姆斯能力将提供对硅加工过程中杂质的非平衡扩散、捕获和活化的基本理解。UCSB和其他地方的材料研究人员对该仪器表现出的高度兴趣强烈表明，它将被充分利用来进行令人兴奋的材料科学。***

9703930 Kramer This award provides support for the acquisition of a dynamic secondary ion mass spectrometer (SIMS) based on a quadrupole mass analyzer for materials research. It will be installed in the Electron Microscope and Microanalytical Facility of the University of California Santa Barbara (UCSB) Materials Research Science and Engineering Center (MRSEC) and will be open to use by all qualified users at UCSB and the nationwide MRSEC system. The instrument selected is optimized for depth profiling insulating samples such as polymers and ceramics but will also serve the most of the depth profiling needs for semiconductors. It is equipped with a rotation attachment, for improving depth resolution at interfaces well below the surface, as well as a liquid nitrogen cooled sample stage accessory, which will make it possible to depth profile polymers that are molten at room temperature. In addition to the standard duoplasmatron ion source (for oxygen or argon ions), a cesium ion source will be acquired. While an O2+ or AR+ beam is ideal for polymer depth profiling, a Cs+ beam is optimum for depth profiling many elements in semiconductors. The acquisition of this instrument will provide important new capabilities for investigating phase separation in polymer thin films, short range diffusion in ordered block copolymer systems, the grafting of polymer chains to polymer/polymer interfaces by chemical reaction, the structure of surfaces of semifluorinated side group block copolymer surfaces that resist reconstruction in water and of antifouling coatings made of copolymer consisting of water soluble blocks and non-water soluble glassy blocks and for monitoring the formation of molecular bridges between surfaces in hot melt adhesives. %%% While this instrument will have an exceptional impact on research on polymer surfaces and interfaces, it will also be of great value to researchers investigating impurity levels in epitaxial thin films of oxides and diffusion i n ceramics. Moreover the dynamic SIMS will enable much improved characterization of nitrides grown by both metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE), as well as multiple quantum well structures in these systems for optoelectronic devices. SIMS depth profiling of Mn in Mn ion implanted GaAs magnetic semiconductors will provide crucial information on the nanostructure of these exciting materials. SIMS determinations will provide key information on vertical cavity semiconductor laser structure grown by MBE, on non-stoichiometry in compound semiconductor layers and on oxide distribution in AlAs layers. In addition the dynamic SIMS capability will provide fundamental understanding of the non-equilibrium diffusion, trapping, and activation of impurities during silicon processing. The high interest shown in this instrument by materials researchers at UCSB and elsewhere is a strong indication that it will be fully utilized to do exciting materials science. ***