SBIR Phase II: Ambient Temperature Chloroaluminate Ionic Liquids for Preparation of Precursors to III-V Ceramic Materials

该小型企业创新研究（SBIR）第二阶段项目解决了生产III-V族陶瓷材料（例如氮化铝）的高纯前体的一般方法。 这些材料在微电子封装、光电子器件和耐磨或耐化学性表面涂层中的应用越来越重要。 第二阶段将开发一种普遍的均质化学路线，以大量生产用于各种用途的稳定前体。 这条路线将通过使应用基础多样化来降低最终材料的成本。 所提出的方法将利用环境温度氯铝酸盐离子液体的独特化学性质，通过温和的室温路线生成高纯度的氮化铝前体。 将开发用于表面涂层的化学气相沉积的挥发性前体和用于制备粉末的非挥发性前体的生产路线。 离子液体的化学性质将允许使用不将碳或氧杂质引入最终材料的反应物从统一的过程制备不同的前体。 该工艺将为III-V族陶瓷生产大量稳定、高纯度的化学前体。 这些材料将用于陶瓷涂层、微电子电路基板的块体材料、光电元件和航空航天工业的先进保护涂层。

This Small Business Innovation Research (SBIR) Phase II project addresses a general method for production of high purity precursors to III-V ceramic materials, exemplified by aluminum nitride. These materials are increasing in importance for applications in microelectronic packaging, optoelectronic devices and wear or chemical resistant surface coatings. Phase II will develop a generalized homogeneous chemical route to bulk quantities of stable precursors for diverse applications. This route will lower the cost of final materials by diversifying the base of applications. The proposed approach will exploit unique chemistry of ambient temperature chloroaluminate ionic liquids to generate ultrahigh purity precursors to aluminum nitride by a mild, room temperature route. Routes will be developed for production of volatile precursors for chemical vapor deposition of surface coatings and nonvolatile precursors for preparation of powders. The chemistry of the ionic liquid will allow different precursors to be prepared from a unified process, using reactants that do not introduce carbon or oxygen impurities into the final materials. The proposed process will produce bulk quantities of stable, ultrahigh purity chemical precursors to III-V ceramics. These materials will be useful for ceramic coatings, bulk materials for microelectronic circuit substrates, optoelectronic components and advanced protective coatings for the aerospace industry.