Ductile Regime Single Point Diamond Machining of Semiconductors: Mechanisms Exploration and Process Development

小行星9813257 本研究的目的是：（1）利用显微拉曼光谱技术研究Si、Ge、GaAs、InSb、CdTe等半导体材料的加工碎屑和加工表面的相组成。 (2)使用压痕和划痕试验代替更复杂和昂贵的真实的加工实验来预测和优化延性加工条件。 (3)根据获得的信息预测和优化单点金刚石车削条件。 (4)对上述材料进行实际的单点金刚石车削，验证表面质量和延性区切屑去除模式，以及其在无损伤和超平面加工表面方面的优势。 (5)量化与当前的研磨抛光方法相比，硅晶片、GE和其他半导体的制造过程时间的减少。 如果成功的话，这项研究将弥合材料科学理论和加工实践之间的差距，并改变的方法来选择和优化的延性制度的条件，从“试错”到“预测验证”的测试。 这将为脆性半导体提供一种快速可靠的超精密加工方法，从而产生更好的表面质量和尺寸精度。 用于识别延展性状态的相同显微拉曼技术将用于机加工表面的质量控制。

9813257 Gogotsi The objectives of this research project are to: (1) Investigate the phase composition of machining debris and machined surfaces of Si, Ge, GaAs, InSb, CdTe and, eventually, other semiconductors using micro-Raman spectroscopy. (2) Use the indentation and scratch tests instead of much more complicated and expensive real machining experiments for prediction and optimization of the conditions of ductile machining. (3) Predict and optimize single-point diamond turning conditions based on the obtained information. (4) Perform actual single point diamond turning of above mentioned materials, verify surface quality and ductile regime chip removal mode, and its resulting advantages in terms of damage-free and super flat machined surfaces. (5) Quantify the reduction in manufacturing process time of silicon wafers, GE, and other semiconductors compared to current lapping-polishing methods. If successful, this research will bridge the gap between the materials science theory and practice of machining and change the approach to the selection and optimization of the ductile regime conditions from "trial-error" to "prediction-verification" tests. This will provide a fast and reliable ultra-precision machining method for brittle semiconductors, which will produce a better surface quality and dimensional accuracy. The same micro-Raman technique that is used for identification of the ductile regime will be used for quality control of machined surfaces.