Collaborative Resarch: Materials World Network: III-V Bismide Materials for IR and Mid IR Semiconductors

提出的材料世界网络的目标是在理论上和实验上研究和开发用于红外（IR）和中红外光电器件和其他窄带隙器件的III-V型铋化合物半导体，其晶格常数为GaAs， InP， InAs和GaSb衬底；包括GaAs和InP上的GaAsBi，以及GaSb或InAs上的GaAsSbBi和GaInAsSbBi。III-V双聚体在材料研究领域提供了新的技术前景，并有机会开发具有以下特点的创新材料：i)在GaAs衬底上覆盖3 μm的近红外波长，在GaSb衬底上覆盖2 μm以上的所有波长的潜力，ii)独特的大自旋轨道分裂为半导体自旋电子器件提供了机会，iii)自旋轨道带偏移通常大于带隙能量，这为开发具有显著减少俄歇复合的活性材料提供了机会。iv)带隙能量的弱温度依赖性，为发射器和探测器提供了更好的温度稳定性，以及v)带偏移工程的机会，为基于GaSb的中红外材料的空穴约束提供了实质性的改进。知识优势：提议的材料网络通过汇集来自世界各地的材料科学，电气工程和物理学领域的先进资源的领先专家来增加价值，以快速推进III-V铋合金领域的发现和理解，以及它们如何影响带隙能量，带偏移和材料性能。该团队特别适合完成所提出的任务，涵盖基本晶体生长，材料科学，器件制造和器件物理。此外，将半金属化合物（GaBi）与半导体合金化可以潜在地创造出在电学和光学性能方面具有显著和高度可开发变化的合金。这项工作的构思和组织是为了大大提高对III-V双聚体的理论和实验理解和认识。此外，拟议的网络通过发展网络基础设施来增强研究人员和更广泛的科学界之间的数据共享和分析，从而增加了价值，这很可能改变数据管理和解决重大挑战的方式。更广泛的影响：提议的研究通过推进iii - v双聚体的材料知识库，使当前和未来工程重大挑战所需的新设备受益，例如i)用于国土安全和污染检测的中长红外激光器和探测器，ii)用于信息和通信技术的高效近红外激光器和探测器，以及iii)用于可持续能源转换的光伏和热光伏太阳能发电。此外，拟议的计划通过以下方式增加价值并增强研究和教育基础设施：1)在全球范围内连接跨专业领域的科学家；2)促进新型iii - v双化物材料开发的样品交换和工具共享；3)形成下一代器件外延生长和材料工程开发的国际研究和教育网络。iv)将拟议的全球研究团队与先进的网络基础设施对接，以加强对拟议材料的科学和技术理解。提议的活动通过i)在全球范围内连接创新和基础材料研究和教育，ii)将具有广泛专业领域的世界级研究人员和学生聚集在一起，了解和发现III-V型铋合金如何影响带隙能量，带偏和材料性能作为铋摩尔分数和温度的函数，从而促进发现和理解，同时促进教学，培训和学习；iii)提供先进的数据组织和检查，以指导iii - v类双化物器件在宽带隙能量范围内的设计和材料工程；iv)开发具有卓越性能的器件。此外，拟议的合作还通过以下方式增加科学技术的价值：1)在国际研讨会上进行面对面的互动，2)在国际期刊上发表学生和研究人员的成果，3)促进数据共享和信息交换，进一步激发创新和有益的研究。

The objective of the proposed materials world network is to theoretically and experimentally research and develop III-V bismide compound semiconductors for infrared (IR) and mid IR optoelectronic devices and other narrow bandgap devices at the readily available lattice constants of GaAs, InP, InAs, and GaSb substrates; including GaAsBi on GaAs and InP, and GaAsSbBi and GaInAsSbBi on GaSb or InAs. III-V bismides offer new technology prospects in the area of materials research and the opportunity to develop an innovative class of materials that have: i) the potential to cover near IR wavelengths up to 3 μm on GaAs substrates and all wavelengths beyond 2 μm on GaSb substrates, ii) a uniquely large spin orbit splitting which provides an opportunity for semiconductor spintronic devices, iii) a spin orbit band offset that is typically larger than bandgap energy which provides an opportunity to develop active materials with significantly reduced Auger recombination, iv) a weak temperature dependence of the band gap energy that offers improved temperature stability for emitters and detectors, and v) the opportunity for band offset engineering that offers substantial improvement for hole confinement in GaSb based mid IR materials.Intellectual Merits: The proposed materials network adds value by bringing together leading experts with state-of-the-art resources in materials science, electrical engineering, and physics from around the world to rapidly advance discovery and understanding in the area of III-V bismide alloys and how they impact bandgap energy, band offsets, and material performance. This team is particularly well suited to accomplish the proposed tasks, which span fundamental crystal growth, materials science, device fabrication, and device physics. Furthermore, alloying the semimetallic compound (GaBi) with semiconductors can potentially create an alloy with significant and highly exploitable changes in its electrical and optical properties. This effort is conceived and organized to substantially advance the theoretical and experimental understanding and knowledge of III-V bismides. Furthermore, the proposed networking adds value by developing cyberinfrastructure to enhance data sharing and analysis between the investigators and the broader scientific community which may well change the way data is managed and material challenges are addressed.Broader Impacts: The proposed research benefits society by advancing the materials knowledge base of III-V bismides to enable novel devices needed for present and future engineering grand challenges, such as i) mid and long IR lasers and detectors for homeland security and pollution detection, ii) efficient near IR lasers and detectors for information and communication technology, and iii) photovoltaic and thermal photovoltaic solar-electrics for sustainable energy conversion. Moreover, the proposed program adds value and enhances infrastructure for research and education by i) linking scientists across areas of expertise on a global scale, ii) promoting sample exchange and tool sharing for the development of novel III-V bismide materials, iii) forming an international research and education network for epitaxial growth and materials engineering development for next generation devices, and iv) interfacing the proposed global research team with advanced cyberinfrastructure to enhance scientific and technological understanding of the proposed materials. The proposed activity advances discovery and understanding while promoting teaching, training, and learning by i) connecting innovative and fundamental materials research and education on a global scale, ii) bringing together world class researchers and students with broad areas of expertise to understand and discover how III-V bismide alloys impact bandgap energy, band offsets, and material performance as a function of bismuth mole fraction and temperature; iii) providing advanced data organization and examination to guide the design and materials engineering for III-V bismide devices over a wide range of bandgap energies, and iv) enabling the development of devices with exceptional performance. In addition, the proposed collaboration adds value by enhancing science and technology through broader dissemination and understanding by i) faceto- face interaction at international workshops, ii) publication of student and researcher results in international journals, and iii) advancing data sharing and information exchange to further inspire innovative and rewarding research.