Morphology and Chemistry of Lateral Composition Modulation

本项目旨在更好地理解化合物半导体外延过程中自发横向成分调制的机制(S)。这种方法是研究分子束外延生长的横向成分调制结构的形态和化学之间的相互作用，并用原位扫描隧道显微镜进行研究。将研究吸附原子与表面特征的相互作用、吸附原子进入晶格以及形态演变的细节。预计这些研究将为更好地理解和开发应变层合金生长的新模型提供基础，包括形态和化学演化，并有助于将这些结构应用于新型低维器件。该项目解决了材料科学中具有很高潜在技术相关性的主题领域的基础研究问题。这项研究将在基础水平上为电子/光子器件的新方面贡献基本的材料科学知识。从研究中获得的基本知识和理解将有助于提高先进器件和电路的性能，为设计和生产改进的材料和材料组合提供基本的理解和基础。该计划的一个重要特点是通过在一个具有根本意义和技术意义的领域对学生进行培训，将研究和教育结合起来。***

This project is directed toward achieving greater understanding of the mechanism(s) of spontaneous lateral composition modulation during epitaxy of compound semiconductors. The approach is to examine interactions between the morphology and chemistry of structures exhibiting lateral composition modulation grown by Molecular Beam Epitaxy and studied with in situ Scanning Tunneling Microscopy. Details of adatom interactions with surface features, adatom incorporation into the lattice, and morphological evolution will be studied. It is anticipated that these studies will provide the basis for greater understanding, and the development of new models of strained-layer alloy growth including morphological and chemical evolution, and assist in the application of these structures to novel low dimensional devices. %%%The project addresses basic research issues in a topical area of materials science having high potential technological relevance. The research will contribute basic materials science knowledge at a fundamental level to new aspects of electronic/photonic devices. The basic knowledge and understanding gained from the research is expected to contribute to improving the perform-ance of advanced devices and circuits by providing a fundamental understanding and a basis for designing and producing improved materials, and materials combinations. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***