POWRE: Development of a New Cobalt Precursor for Chemical Vapor Deposition

该研究涉及各种钴络合物的合成和随后的气相分解，这些钴络合物具有各种金属氧化态和配体，这些配体是为了络合物挥发性和稳定性的正确组合而选择的。 CVD（化学气相沉积），可选地与硅前体，将用于寻找在单晶硅表面上产生电子器件质量的CoSi 2的化合物和条件。 沉积的薄膜将通过各种表面分析方法进行表征，包括AES、XPS、西姆斯和SEM，并将结果用于指导合成工作。通过这项POWRE奖，化学部支持伊利诺伊大学香槟分校贝克曼高级科学技术研究所的Hyungsoo Choi博士的工作。 她将使用挥发性钴络合物的化学气相沉积（CVD）在硅表面上制备电子器件质量的CoSi2。 受控微观尺寸的良好形成的CoSi 2膜对于高度小型化（纳米级）的电子半导体器件将是非常有用的。

The research involves the synthesis and subsequent decomposition in the vapor phase of a variety of cobalt complexes with various metal oxidation states and ligands chosen for the right combination of complex volatility and stability. CVD (chemical vapor deposition), optionally with a silicon precursor, will be used in a search for compounds and conditions that produce electronic device-quality CoSi2 on a single crystal silicon surface. The deposited films will be characterized with a variety of surface analysis methods, including AES, XPS, SIMS, and SEM, and the results used to guide the synthesis effort.With this POWRE award the Chemistry Division supports the work of Dr. Hyungsoo Choi at the Beckman Institute for Advanced Science and Technology at the University of Illinois at Urbana-Champaign. She will use the chemical vapor deposition (CVD) of volatile cobalt complexes to prepare electronic device-quality CoSi2 on silicon surfaces. Well formed films of CoSi2 of controlled microscopic dimensions would be very useful for highly miniaturized (nanoscale) electronic semiconductor devices.