Electro-Migration of Oxygen Vacancies in Perovskite Thin Films

这项关于钙钛矿型薄膜中点缺陷迁移的项目的目的是为了更好地理解高介电常数介质层中电场诱导的氧空位运动。这项工作的技术动机源于对用于片上集成电容器的钙钛矿型介质可靠性的担忧。场驱动氧空位迁移是所提出的这些薄膜随时间退化的机制的一个关键特征。然而，到目前为止，在高介电常数薄膜系统中，氧空位电迁移的明确物理特性还没有报道。在这个项目中，将测量空位迁移动力学，并使用数据来测试所提出的钙钛矿介质的疲劳、印迹和电阻退化机制。结合对电介质中铁电滞后和电荷传输的测量，动力学数据可能允许开发退化过程的定量和预测模型。%建议的研究项目将实验和建模相结合，以提高我们对一类在集成电路应用中具有巨大技术重要性的材料的行为的理解。该项目将通过惠普实验室和IBM的T.J.沃森研究实验室的工业研究人员的协作工作(包括延长访问和联合计划的实验)，为学生提供特殊的教育体验。*

9974341McIntyreThe objective of this project on point defect migration in perovskite thin films is to develop a better understanding of electric field--induced oxygen vacancy motion in high-permittivity dielectric layers. The technological motivation for this work is derived from concerns about the reliability of perovskite dielectrics for integrated on-chip capacitors. Field-driven oxygen vacancy migration is a key feature of the proposed mechanisms for time-dependent degradation of these films. However, unambiguous physical characterization of oxygen vacancy electro-migration has not been reported to date in the high permitivity thin film systems of technological interest. In this project, vacancy migration kinetics will be measured and the data used to test proposed mechanisms for fatigue, imprint, and resistance degradation of perovskite dielectrics. Combined with measurements of ferroelectric hysteresis and charge transport across the dielectrics, the kinetic data may allow the development of quantitative and predictive models for the degradation processes.%%%The proposed research project combines experiments and modeling to improve our understanding of behavior of a class of materials that have immense technological importance in integrated circuit applications. The project will provide the students with a special educational experience through collaborative work (including extended visits and jointly-planned experiments) involving industrial researchers at Hewlett-Packard Laboratories and IBM's T.J. Watson Research Lab.***