FRG/GOALI: Degradation Mechanisms, Micromechanics, and Microstructural Engineering of Thin Film Electrodes for High Permittivity Dielectrics

FRG/GOALI：高介电常数电介质薄膜电极的降解机制、微力学和微结构工程

• 批准号: 0072134
• 负责人: Paul McIntyre
• 金额: $ 122.25万
• 依托单位: Stanford University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2000
• 资助国家: 美国
• 起止时间: 2000-07-01 至 2004-03-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0072134&HistoricalAwards=false
• 关键词: FRG; GOALI; Degradation; Mechanisms; Micromechanics

This FRG/GOALI project is a collaborative effort between researchers at Stanford U., Lehigh U., and Applied Materials, Santa Clara, CA. The project addresses microstructural stability, micromechanics, and electrical properties of materials used in the fabrication of on-chip capacitors incorporating dielectrics such as BaxSr1-xTiO3 (BST) and PbZrxTi1-xO3 (PZT). The aim is to improve understanding of thin film micromechanics, on-chip capacitor electrical performance, and how both electrical and mechanical properties may be modified through thin film microstructural control. Emphasis is on development of a mechanistic understanding of stress relaxation, surface roughening, and film debonding processes occurring during processing of thin film electrodes and diffusion barriers for high-K capacitor applications. Degradation of interfacial contact resistivity and dielectric reliability using patterned capacitor test structures will also be studied. Thermal stress relaxation of electrodes, which affects both adhesion and roughness, will be modified by alloying electrode layers and producing two phase microstructures through internal oxidation. It is anticipated that the research will lead to new strategies for improving the reliability and processing stability of on-chip capacitors that use perovskite-structure high permittivity dielectrics. Research will be performed by a multi-disciplinary, multi-investigator team at Stanford University and Lehigh University. Students and faculty will collaborate with materials researchers and process-integration specialists at Applied Materials, Inc. Joint research activities with AMAT will include sharing of research resources and samples, joint planning of experiments and regular meetings to review progress, visits by students to Applied Materials' laboratories, and mentorship of students by AMAT personnel.%%%The project addresses basic research issues in a topical area of materials science with high technological relevance. The basic knowledge and understanding gained from the research is expected to contribute to improving electronic materials performance in current and future device and circuit applications. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. The multidisciplinary (materials science, electrical engineering) and industrially-connected nature of this FRG/GOALI program offers unique educational opportunities for students to experience a teamwork-oriented research environment from both academic and industrial perspectives. The project is co-funded by the Electronic Materials(EM) and Metals(MET) programs in DMR, the Mechanics And Structures of Materials program in ENG/CMS, and the ENG GOALI office.***

这个FRG/GOALI项目是斯坦福大学的研究人员之间的合作努力，利哈伊大学，和Applied Materials，Santa Clara，CA。该项目解决了微结构稳定性，微观力学和用于制造片上电容器的材料的电气性能，包括Sr 1-xTiO 3（BST）和PbZrxTi 1-xO 3（PZT）。其目的是提高对薄膜微观力学，片上电容器电气性能，以及如何通过薄膜微结构控制来修改电气和机械性能的理解。重点是发展的应力松弛，表面粗糙化，和薄膜剥离过程中发生的高K电容器应用的薄膜电极和扩散障碍的加工过程中的机械理解。也将研究使用图案化电容器测试结构的界面接触电阻率和介电可靠性的退化。热应力松弛的电极，影响粘附力和粗糙度，将修改合金化电极层，并通过内氧化产生两相微结构。预计该研究将导致新的策略，用于提高使用钙钛矿结构高介电常数电容器的片上电容器的可靠性和加工稳定性。研究将由斯坦福大学和利哈伊大学的多学科、多研究者团队进行。学生和教师将与应用材料公司的材料研究人员和工艺集成专家合作。与AMAT的联合研究活动将包括共享研究资源和样品，联合规划实验和定期会议以审查进展，学生参观应用材料的实验室，以及AMAT人员对学生的指导。该项目涉及材料科学专题领域的基础研究问题，具有高度的技术相关性。从研究中获得的基本知识和理解预计将有助于提高当前和未来器件和电路应用中的电子材料性能。该计划的一个重要特点是通过在一个基本和技术上重要的领域对学生进行培训来整合研究和教育。该FRG/GOALI计划的多学科（材料科学，电气工程）和工业连接性质为学生提供了独特的教育机会，从学术和工业角度体验以团队合作为导向的研究环境。该项目由DMR的电子材料（EM）和金属（MET）计划，ENG/CMS的材料力学和结构计划以及ENG GOALI办公室共同资助。