FRG/GOALI: Degradation Mechanisms, Micromechanics, and Microstructural Engineering of Thin Film Electrodes for High Permittivity Dielectrics

这个FRG/GOALI项目是斯坦福大学、理哈伊大学和加州圣克拉拉应用材料公司的研究人员之间的合作成果。该项目研究用于制造片上电容器的微结构稳定性、微观力学和电性能，这些电容器包含BaxSr1-xTiO3 （BST）和PbZrxTi1-xO3 （PZT）等电介质。目的是提高对薄膜微观力学，片上电容器电性能的理解，以及如何通过薄膜微结构控制来改变电学和机械性能。重点是在高k电容器应用的薄膜电极和扩散屏障加工过程中发生的应力松弛、表面粗化和薄膜脱粘过程的机械理解的发展。使用图案化电容器测试结构的界面接触电阻率和介电可靠性的退化也将被研究。电极的热应力松弛将通过合金电极层和通过内部氧化产生两相组织来改善，这将影响电极的附着力和粗糙度。预计该研究将为提高使用钙钛矿结构高介电常数电介质的片上电容器的可靠性和加工稳定性提供新的策略。研究将由斯坦福大学和利哈伊大学的一个多学科、多研究者团队进行。学生和教师将与应用材料公司的材料研究人员和工艺集成专家合作。与AMAT的联合研究活动将包括共享研究资源和样品，联合规划实验和定期会议以审查进展，学生访问应用材料公司的实验室，以及AMAT人员对学生的指导。该项目涉及材料科学中具有高技术相关性的主题领域的基础研究问题。从研究中获得的基本知识和理解有望有助于改善当前和未来器件和电路应用中的电子材料性能。该计划的一个重要特点是通过培养学生在一个基础和技术上重要的领域的研究和教育的整合。这个FRG/GOALI项目的多学科（材料科学，电气工程）和工业连接的性质为学生提供了独特的教育机会，让他们从学术和工业的角度体验以团队合作为导向的研究环境。该项目由DMR的电子材料（EM）和金属（MET）项目、ENG/CMS的材料力学和结构项目以及ENG GOALI办公室共同资助

This FRG/GOALI project is a collaborative effort between researchers at Stanford U., Lehigh U., and Applied Materials, Santa Clara, CA. The project addresses microstructural stability, micromechanics, and electrical properties of materials used in the fabrication of on-chip capacitors incorporating dielectrics such as BaxSr1-xTiO3 (BST) and PbZrxTi1-xO3 (PZT). The aim is to improve understanding of thin film micromechanics, on-chip capacitor electrical performance, and how both electrical and mechanical properties may be modified through thin film microstructural control. Emphasis is on development of a mechanistic understanding of stress relaxation, surface roughening, and film debonding processes occurring during processing of thin film electrodes and diffusion barriers for high-K capacitor applications. Degradation of interfacial contact resistivity and dielectric reliability using patterned capacitor test structures will also be studied. Thermal stress relaxation of electrodes, which affects both adhesion and roughness, will be modified by alloying electrode layers and producing two phase microstructures through internal oxidation. It is anticipated that the research will lead to new strategies for improving the reliability and processing stability of on-chip capacitors that use perovskite-structure high permittivity dielectrics. Research will be performed by a multi-disciplinary, multi-investigator team at Stanford University and Lehigh University. Students and faculty will collaborate with materials researchers and process-integration specialists at Applied Materials, Inc. Joint research activities with AMAT will include sharing of research resources and samples, joint planning of experiments and regular meetings to review progress, visits by students to Applied Materials' laboratories, and mentorship of students by AMAT personnel.%%%The project addresses basic research issues in a topical area of materials science with high technological relevance. The basic knowledge and understanding gained from the research is expected to contribute to improving electronic materials performance in current and future device and circuit applications. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. The multidisciplinary (materials science, electrical engineering) and industrially-connected nature of this FRG/GOALI program offers unique educational opportunities for students to experience a teamwork-oriented research environment from both academic and industrial perspectives. The project is co-funded by the Electronic Materials(EM) and Metals(MET) programs in DMR, the Mechanics And Structures of Materials program in ENG/CMS, and the ENG GOALI office.***