SBIR Phase II: Sub-Nanosecond Spin Dependent Tunneling Devices

这个小型企业创新研究(SBIR)第二阶段项目将结合第一阶段实现的高速磁性薄膜和低RC SDT结构，开发原型自旋相关隧道(SDT)器件。这些器件将使用标准微电子光刻和封装技术制造，适合批量生产。这些与集成电路(IC)电子学集成的器件将演示亚纳秒开关。快速集成电路电子产品将使用低电压差分信号(LVDS)来实现。与巨磁电阻(GMR)器件相比，SDT器件具有信号大、开关场小、电阻高等特点，具有灵敏度高、功耗低、体积小、重量轻等优点。快速SDT器件将需要提高磁速和电子速度，同时需要保持现有的吸引人的静态特性。这项研究有望在高速隔离器、高速磁场和电流传感器件、快速磁随机存取存储器(MRAM)、可重构磁逻辑、读取头和千兆赫(GHz)电感/变压器及其衍生产品中获得潜在的商业应用。

This Small Business Innovation Research (SBIR) Phase II project will develop prototype Spin Dependent Tunneling (SDT) devices by combining high-speed magnetic thin films and low-RC SDT structures achieved in Phase I. These devices will be fabricated using standard microelectronic photolithography and packaging techniques, suitable for volume production. Sub-nanosecond switching will be demonstrated with these devices which are integrated with integrated circuit (IC) electronics. Fast IC electronics will be implemented using low voltage differential signaling (LVDS). SDT devices exhibit large signal, low switching field, and high resistance, which lead to high sensitivity, low power consumption, and small size and weight, when compared with giant magnetoresistive (GMR) devices. Fast SDT devices will require improvements in both magnetic speed and electronic speed, while existing attractive static properties need to be maintained. Phase II is expected to produce integrated SDT devices with state-of-the-art properties and switching time less than one nanosecond.Potential commercial applications for this research are expected in high-speed isolators, high-speed magnetic field and current sensing devices, fast magnetic random access memories (MRAM), reconfigurable magnetic logic, read heads, and gigahertz (GHz) inductor/transformers, as well as their derivative products.