CAREER: The Materials Science of Metamorphic Buffer Layers for High Performance Device Applications
CAREER: The Materials Science of Metamorphic Buffer Layers for High Performance Device Applications
批准号:
0092602
负责人:
Joanna Millunchick
金额:
$45.91万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2001
资助国家:
美国
项目状态:
已结题
起止时间:
2001-01-01 至 2005-12-31
中文摘要
这一职业项目涉及变形缓冲层的形成、应变松弛和形态演变,以及它们对无线通信行业专用设备应用的特性和性能的影响。将研究基于含Sb合金的缓冲层,以获得平坦和低缺陷层。此外,还将研究减少粗糙度和螺纹位错的层设计。将使用原位(多光束光学应力传感器、反射高能电子衍射、扫描隧道显微镜)和非原位(三轴X射线衍射、透射式电子衍射、光致发光、霍尔测量)技术来表征性能,以评估微结构和形貌及其对电子和光学性能的影响。此外,MHEMT器件将基于优化的变形缓冲层制造,经过测试,并与最先进的器件相比具有更高的性能。该项目将被整合到教育活动中,包括本科生和研究生课程开发,本科生研究机会,以及对年轻女性的推广。%该项目解决具有高度技术相关性的材料科学主题领域的基础研究问题。这项研究将在基础水平上为电子/光子材料的重要方面贡献基本的材料科学和物理知识。该项目的范围将使学生在材料合成、加工和表征方面面临挑战。该项目的一个重要特点是非常重视教育、对年轻妇女的宣传以及研究和教育的结合。***
英文摘要
This CAREER project addresses the formation, strain relaxation, and morphological evolution of metamorphic buffer layers and their impact on the properties and performance of device applications specific to the wireless communication industry. Buffer layers based on Sb-containing alloys will be studied to achieve flat and low defect layers. Layer designs that reduce roughness and threading dislocations will also be studied. Properties will be characterized using a in situ (Multi-Beam Optical Stress Sensor, Reflection High Energy Electron Diffraction, Scanning Tunneling Microscopy)and ex situ (triple axis x-ray diffraction, transmission electron diffraction, photoluminescence, Hall measurements) techniques to assess microstructure and morphology, and their impact on electronic and optical properties. Additionally, MHEMT devices will be fabricated based on optimized metamorphic buffer layers, tested, and performance compared to the state-of-the-art devices. The project will be integrated into educational activities that include undergraduate and graduate curriculum development, undergraduate research opportunities, and outreach to young women.%%% The project addresses fundamental research issues in a topical area of materials science having high technological relevance. The research will contribute basic materials science and physics knowledge at a fundamental level to important aspects of electronic/photonic materials. The scope of the project will expose students to challenges in materials synthesis, processing, and characterization. An important feature of the project is the strong emphasis on education, outreach to young women, and the integration of research and education. ***
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会议论文
Research Initiation: Understanding the relationships between participation in co-curricular activities, student characteristics, and the professional formation of engineers.
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批准号:1640417
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项目类别:Standard Grant
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资助金额:$15.0万
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财政年份:2016
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负责人:Joanna Millunchick
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依托单位:
Closed-Loop Experiment-Simulation Approach to Designer Materials: GaAsSbBi for Optoelectronics.
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批准号:1606553
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项目类别:Standard Grant
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资助金额:$41.0万
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财政年份:2016
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负责人:Joanna Millunchick
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依托单位:
I-Corps: On-chip Integration of Optoelectronic Devices
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批准号:1622890
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项目类别:Standard Grant
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资助金额:$5.0万
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财政年份:2016
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负责人:Joanna Millunchick
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依托单位:
Collaborative Research: Materials World Network: III-V Bismide Materials for IR and Mid IR Semiconductors
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批准号:0908745
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项目类别:Continuing Grant
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资助金额:$25.5万
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财政年份:2009
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负责人:Joanna Millunchick
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依托单位:
Morphology and Chemsitry of Lateral Composition Modulations
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批准号:0307938
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项目类别:Continuing Grant
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资助金额:$0.0万
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财政年份:2003
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负责人:Joanna Millunchick
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依托单位:
POWRE: Optical Characterization for Research and Undergraduate Education
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批准号:0074712
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项目类别:Standard Grant
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资助金额:$7.5万
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财政年份:2000
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负责人:Joanna Millunchick
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依托单位:
Morphology and Chemistry of Lateral Composition Modulation
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批准号:9973352
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项目类别:Standard Grant
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资助金额:$29.53万
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财政年份:1999
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负责人:Joanna Millunchick
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依托单位:
国内基金
海外基金
Capture and Release of Droplets Using Advanced Materials for High Technology Applications
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批准号:52073127
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项目类别:面上项目
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资助金额:58.0万元
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批准年份:2020
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负责人:Alidad Amirfazli
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依托单位:
Journal of Materials Science & Technology
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批准号:51024801
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项目类别:专项基金项目
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资助金额:24.0万元
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批准年份:2010
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负责人:罗东
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依托单位: