NER: Carbon Nanotube Devices and Integrated Systems

建议没有。项目名称：南加州大学项目名称：NER：碳纳米管器件与集成系统本课题旨在设计、构建和评估各种新型纳米管器件与集成系统。具体来说，我建议制作n型场效应晶体管（FET），纳米管p-n结和集成的单分子CMOS逆变器。本研究具有探索性；然而，如果成功，将推进我们对纳米管基本特性的理解，并为现实世界生产实用的纳米级器件。在过去的几年里，人们对碳纳米管进行了大量的研究。p型场效应晶体管已被证明是由半导体纳米管和硅衬底背板由一层SiO2分离的管组成的。尽管人们对开发n型场效应管以实现纳米级cmos电路非常感兴趣，但由于缺乏有效的纳米管掺杂方法，研究工作一直受到阻碍。我建议演示一种简单，有效和可靠的方法来静电掺杂纳米管到n型，从而为n型场效应管，p-结和集成系统铺平道路。这种新方法将使用TiO2代替SiO2作为栅介质。TiO2的介电常数为30，而SiO2的介电常数为3.8，利用TiO2的栅极的效率将是先前报道的7倍。我们的初步分析证实，在合理的栅极偏置（~ 10 V）下，纳米管可以静电掺杂成n型，从而产生n型场效应管。此外，碳纳米管p-n结将通过劈裂门技术进行演示，通过将TiO2沉积在与源极和漏极接触的半导体纳米管上，并在TiO2上绘制两个栅极，每个栅极覆盖管的一半。通过独立控制这两个栅极偏置，可以将左半管调谐为p型，将右半管调谐为n型，从而在两者之间形成p-n结，这为一维研究耗尽和筛选提供了理想的系统。最后，我们将演示一个简单的集成系统，除了源极和漏极外，我们还将在半导体纳米管的中心附加一个电极。这个中心电极将纳米管分成两段，作为电路的输出。将具有TiO2介电层的硅衬底背板作为电路输入，将一段管段调谐为n型场效应管，另一段管段调谐为p型场效应管，从而形成世界上第一个单分子逆变器。

PROPOSAL NO.: 0102955PRINCIPAL INVESTIGATOR: Zhou, ChongwuINSTITUTION NAME: University of Southern CaliforniaTITLE: NER: Carbon Nanotube Devices and Integrated SystemsThis is a proposal to design, build and evaluate various novel nanotube devices andintegrated systems. Specifically I propose to make n type field effect transistors (FET),nanotube p-n junctions, and an integrated single-molecule CMOS inverter. This researchis exploratory in nature; however, if successful, will advance our understanding of thefundamental properties of nanotubes and produce practical nanoscale devices for the realworld.There has been a great deal of research into carbon nanotubes in the past few years. Ptype field effect transistors have been demonstrated consisting of semiconductivenanotubes with a silicon substrate backgate separated from the tube by a layer of SiO2.Despite the utmost interest in developing n type FETs to enable nanoscale CMOScircuits, the research effort has been hampered by lack of an effective doping method fornanotubes. I propose to demonstrate a simple, effective and reliable method toelectrostatically dope nanotubes into n type, thus paving the way for n type FETs, p-njunctions and integrated systems. This new method will employ TiO2 instead of SiO2 asthe gate dielectric. With a dielectric constant of 30 for TiO2, as compared to 3.8 for SiO2,the gate utilizing TiO2 will be seven times more effective than previously reported, andour preliminary analysis confirms that with a reasonable gate bias (~ 10 V), a nanotubecan be electrostatically doped into n type, thereby producing an n type FETs.Furthermore, carbon nanotube p-n junctions will be demonstrated with a split-gatetechnique, by depositing TiO2 onto a semiconductive nanotube contacted with source anddrain electrodes, and patterning two gate electrodes atop the TiO2, each covering half ofthe tube. By controlling these two gate biases independently, one can tune the left halftube into p type and the right half into n type, thus creating a p-n junction in between,which provides an ideal system for studying the depletion and screening in onedimension.Finally, a simple integrated system will be demonstrated by attaching an electrode to thecenter of a semiconductive nanotube in addition to the source and drain electrodes. Thiscenter electrode divides the nanotube into two segments and serves as the output of thecircuit. The silicon substrate backgate with TiO2 dielectric layer will serve as the circuitinput and be used to tune one tube segment to function as an n type FET and the othersegment as a p type FET, thereby forming the worlds first single molecule inverter.