SBIR/STTR Phase I: Vertical-Cavity Surface-Emitting Laser Based on Nanostructured Active Material

这个小型企业技术转移研究（STTR）第一阶段项目将进一步开发纳米结构技术，用作光纤激光器的活性材料。先前的研究表明，在砷化镓（GaAs）衬底上生长的自组织III-V半导体纳米结构可以作为1.3微米波长激光的增益区，并且这些结构是实现垂直腔面发射激光器（VCSELs）的有效方法。1.3微米vcsel是用于以太网和其他城域接入和城域应用的高速光纤链路的关键器件。该项目将获得高质量的外延生长设施，能够生长III-V纳米结构和VCSEL镜子，并开发广泛的电子和光电子器件材料。该项目的商业应用是在光纤通信市场。据估计，在未来10年内，1.3微米VCSEL的市场价值将接近10亿美元。

This Small Business Technology Transfer Research (STTR) Phase I Project will further develop a nanostructure technology for use as the active material of a fiber optic laser. Prior research has demonstrated that self-organized III-V semiconductor nanostructures grown on GaAs (gallium arsenide) substrate can operate as the gain region of a 1.3 micron wavelength laser, and that these structures are effective in realizing vertical-cavity surface-emitting lasers (VCSELs). 1.3 micron VCSELs are a key device for high speed fiber optic links for use in Ethernet and other metro access and metro applications. This project will have access to a high quality epitaxial growth facility with the capability to grow the III-V nanostructures and VCSEL mirrors and to develop a broad range of electronic and optoelectronic device materials.The commercial application of this project is in the fiber optics communications market. It is estimated that the market for a 1.3 micron VCSEL could reach close to $1 billion within the next 10 years.