Magnetic Fields in Semiconductor Crystal Growth

这项研究是对复杂磁场对块状晶体生长过程影响的计算研究的延续。在这个项目中，研究人员专注于几个稳定性问题，这些问题对化合物和固溶体半导体晶体的生长很重要。实际上有两个不同的，但高度协同的应用领域涉及：(1)研究旋转磁场对垂直布里奇曼或垂直梯度冻结生长的固溶晶体，如锗和硅合金的影响。研究人员将对RMF进行首次稳定性分析，包括在实际过程中存在的浮力对流和自由表面的影响。(2)研究热电磁对流（TEMC）对化合物半导体晶体磁稳定生长的影响。研究人员将发展线性稳定性分析，以预测从稳定到周期性融化运动的转变，包括浮力对流、强迫对流和瞬变热。这两个有待研究的问题都有可能有助于提高对光学和无线技术至关重要的先进半导体晶体的质量和尺寸。

The research is for a continuation of a computational study of the effects of complex magnetic fields on bulk crystal growth processes. In the project the investigators are focusing on several stability problems that are important for the growth of compound and solid-solution semiconductor crystals. There are really two distinct, but highly synergistic, application areas are involved: (1) Study the effects of rotating magnetic fields on vertical Bridgman or vertical gradient freeze growth of solid-solution crystals such as alloys of germanium and silicon. The investigators will develop the first stability analysis for a RMF including the effects of the buoyant convection and the free surface that are present in the actual process. (2) Study thermoelectromagnetic convection (TEMC) for the magnetically stabilized growth of compound semiconductor crystals. The investigators will develop a linear stability analysis to predict the transition from steady to periodic melt motions with buoyant convection, forced convection and TEMC. Both problems to be studied have the potential to contribute to improved quality and sizes for advanced semiconductor crystals that are important for optical and wireless technologies.