Theory of gap states at metal/semiconductor interfaces; annihilation mechanism and deformation in electric fields
Theory of gap states at metal/semiconductor interfaces; annihilation mechanism and deformation in electric fields
批准号:
20K03815
负责人:
NAKAYAMA Takashi
金额:
$2.75万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2020
资助国家:
日本
项目状态:
已结题
起止时间:
2020-04-01 至 2023-03-31
中文摘要
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英文摘要
期刊论文(42)
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Photo-carrier induced composition separation in mixed-halide CsPb(I<sub>x</sub>Br<sub>1-x</sub>)<sub>3</sub> perovskite semiconductors; first-principles calculation
混合卤化物 CsPb(I<sub>x</sub>Br<sub>1-x</sub>)<sub>3</sub> 钙钛矿半导体中光载流子诱导成分分离;
DOI:
10.35848/1882-0786/acc6b3
发表时间:
2023
期刊:
Applied Physics Express
影响因子:
2.3
作者:
[Tomita Ami, Nakayama Takashi]
通讯作者:
Nakayama Takashi
Enhancement of tunneling currents by isoelectronic nitrogen-atom doping at semiconductor pn junctions; comparison of indirect and direct band-gap systems
通过半导体pn结等电子氮原子掺杂增强隧道电流;
DOI:
10.35848/1347-4065/ac9fb0
发表时间:
2022
期刊:
Japanese Journal of Applied Physics
影响因子:
1.5
作者:
[Cho Sanghun, Nakayama Takashi]
通讯作者:
Nakayama Takashi
強誘電HfO2相の安定性における帯電と歪の複合効果:第一原理計算による検討
充电和应变对铁电 HfO2 相稳定性的综合影响:使用第一性原理计算进行研究
DOI:
--
发表时间:
2021
期刊:
影响因子:
--
作者:
[新井千慧, 白石悠人, 洗平昌晃, 白石賢二, 中山隆史]
通讯作者:
中山隆史
DOI:
10.35848/1347-4065/abf782
发表时间:
2021-05-01
期刊:
JAPANESE JOURNAL OF APPLIED PHYSICS
影响因子:
1.5
作者:
[Cho, Sanghun, Nakayama, Takashi]
通讯作者:
Nakayama, Takashi
酸素空孔の帯電が誘起する金属酸化物の構造変化:第一原理計算による検討
氧空位充电引起的金属氧化物的结构变化:使用第一原理计算的研究
DOI:
--
发表时间:
2022
期刊:
影响因子:
--
作者:
[新井千慧, 中山隆史]
通讯作者:
中山隆史
共 39 条
小学校理科における科学法則の構築過程を通した批判的思考力の育成に関する研究
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批准号:19H00082
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项目类别:Grant-in-Aid for Encouragement of Scientists
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资助金额:$0.22万
-
财政年份:2019
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负责人:NAKAYAMA Takashi
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依托单位:
Screening of natural medicines with chemokine receptor antagonists for allergy therapy
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批准号:26461495
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$3.08万
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财政年份:2014
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负责人:NAKAYAMA Takashi
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依托单位:
The role of c-Myb and ABCG2/BCRP in the drug resistance of mature T-cell lymphomas
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批准号:23591633
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$3.16万
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财政年份:2011
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负责人:NAKAYAMA Takashi
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依托单位:
Theory of atom diffusion and structural stability of metal/semiconductor interfaces: from inorganic to organic systems
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批准号:23540361
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$3.33万
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财政年份:2011
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负责人:NAKAYAMA Takashi
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依托单位:
The role of Fra-2 and c-Myb in the oncogenesis of cutaneous T-cell lymphomas
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批准号:21791103
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项目类别:Grant-in-Aid for Young Scientists (B)
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资助金额:$2.41万
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财政年份:2009
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负责人:NAKAYAMA Takashi
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依托单位:
New Schottky-barrier theory responding to interface structures
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批准号:20540310
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.91万
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财政年份:2008
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负责人:NAKAYAMA Takashi
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依托单位:
Identification of eotaxin-3/CCL26 as a novel functional ligand for CX3CR1
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批准号:19790698
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项目类别:Grant-in-Aid for Young Scientists (B)
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资助金额:$1.73万
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财政年份:2007
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负责人:NAKAYAMA Takashi
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依托单位:
Differentiation Mechanism of Embryonic Stem Cells into Neural Stem Cells
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批准号:17500214
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.24万
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财政年份:2005
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负责人:NAKAYAMA Takashi
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依托单位:
First-principles theoretical study on formation dynamics, defect structures, and electronic structures of interface stacking faults during epitaxial growth
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批准号:13640319
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$1.15万
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财政年份:2001
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负责人:NAKAYAMA Takashi
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依托单位:
First principles calculation of growth dynamics and electronic properties of heterovalent burried-vacancy interfaces
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批准号:10640298
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$1.6万
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财政年份:1998
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负责人:NAKAYAMA Takashi
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依托单位:
First principles calculation of optical spectra of GaAs growing surface structures
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批准号:08640410
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$1.34万
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财政年份:1996
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负责人:NAKAYAMA Takashi
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依托单位:
Micro-quantification of cell-cycle regulating factors by Enzyme-Linked Immuno-Cycling Assay
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批准号:06808083
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$1.34万
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财政年份:1994
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负责人:NAKAYAMA Takashi
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依托单位:
海外基金