STTR Phase I: High Intensity, High Brightness Source of Low Energy Positrons Based on the Generation of Free Nitrogen-13

这个小型企业技术转移(STTR)第一阶段项目将开发一种新的正电子源，其基础是通过12C(d，n)13N反应产生自由13N。与现有技术相比，13N将作为氮气从多孔碳靶中提取出来，输送到偏远地区，并浓缩到一个小直径的点上，这是现有技术的一个重大进步。一层固体Ne将缓和13个Nβ粒子，产生一束慢正电子束。这种方法将产生无与伦比的亮度和比目前的22个Na源高两个数量级的强度，从而为正电子探头在科学和工业上的许多有价值的用途打开大门。即将开发的高强度、高亮度的正电子源将在高数据率、正电子微束仪器中有许多应用，用于以下方面的测定：(1)离子注入引起的辐射损伤对IC半导体导电特性的影响；(2)电迁移对IC中载流引线失效的影响；(3)高速IC中使用的低k介质的特性；(4)塑料薄膜力学性能的老化。

This Small Business Technology Transfer (STTR) Phase I project will develop a novel positron source based on the generation of free 13 N produced via the 12 C(d,n) 13 N reaction. In a major advance over existing technologies, the 13 N will be extracted as nitrogen gas from a porous carbon target, fed to a remote location, and condensed onto a small diameter spot. A layer of solid Ne will moderate the 13 N beta-particles to produce a beam of slow positrons. This approach will yield an unrivaled brightness and two orders of magnitude higher intensity than current 22 Na sources, thus opening the door to many valuable uses of positron probes for science and industry.The high intensity, high brightness positron source to be developed will have many applications to high-data-rate, positron micro-beam instruments for use in determining such things as: (1) the effects of radiation damage due to ion implantation on the conduction characteristics of IC semiconductors; (2) the effects of electro-migration on the failure of current carrying leads in ICs; (3) the properties of low-k dielectrics used in high speed ICs; and (4) the aging of the mechanical properties of plastic films.