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Achieving Molecular Level Control over the Chemical, Electrochemical, and Electrical Properties of Crystalline Si Surfaces

Achieving Molecular Level Control over the Chemical, Electrochemical, and Electrical Properties of Crystalline Si Surfaces
实现对晶体硅表面化学、电化学和电学性质的分子水平控制
批准号:
0213589
负责人:
Nathan Lewis
金额:
$52.5万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2002
资助国家:
美国
项目状态:
已结题
起止时间:
2002-08-15 至 2006-07-31

项目摘要

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中文摘要
翻译
加州理工学院的Nathan刘易斯教授由分析和表面化学项目资助,通过强调硅表面化学,研究更好地控制硅基材料和器件的电气和物理特性。 这些项目包括单晶硅表面的化学和电钝化反应,从中孔硅光电极获得的结构的电荷传输行为,以及硅基纳米管和纳米球的表征,以及有机/无机复合材料的形成。硅表面的化学改性在将分子电子学与基于半导体的电路连接以及开发化学传感器、光电子器件以及光伏和光电化学电池中是重要的。 也许表面改性可以欺骗廉价的多晶硅样品,使其具有目前使用的更昂贵的大单晶的电气和物理特性。
英文摘要
Professor Nathan Lewis of the California Institute of Technology is funded by the Analytical and Surface Chemistry Program for studies leading to better control of the electrical and physical properties of silicon-based materials and devices through an emphasis on silicon surface chemistry. The projects include chemical and electrical passivation reactions on single crystal silicon surfaces, charge transport behavior of structures obtained from mesoporous silicon photoelectrodes, as well as characterization of silicon-based nanotubes and nanospheres, and formation of organic/inorganic composites. Chemical modification of silicon surfaces is important in interfacing molecular electronics to semiconductor-based circuitry and developing chemical sensors, optoelectronic devices and photovoltaic and photoelectrochemical cells. Perhaps surface modification can fool inexpensive polycrystalline silicon samples into having electrical and physical properties of the more expensive large single crystals currently used.
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