Renewal Request for Existing Center for Silicon Wafer Engineering and Defect Science (SiWEDS)
Renewal Request for Existing Center for Silicon Wafer Engineering and Defect Science (SiWEDS)
批准号:
0308883
负责人:
Gerd Duscher
金额:
$41.5万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2003
资助国家:
美国
项目状态:
已结题
起止时间:
2003-05-15 至 2008-04-30
中文摘要
siwed中心与行业成员科学家和工程师密切合作,在硅材料方面开展了独特的多大学研究项目。他们提供关键材料物理和化学解决方案,提高千兆级集成电路所用硅材料和器件的产量、性能和可靠性。siwed的目标区域一方面具有真正长期突破的巨大潜力,另一方面具有短期回报。这个由多所大学组成的I/UCRC由北卡罗莱纳州立大学领导,包括加州大学伯克利分校、亚利桑那州立大学、亚利桑那大学、南佛罗里达大学、华盛顿大学、麻省理工学院和斯坦福大学。
英文摘要
The SiWEDS Center works closely with the industry member scientists and engineers, carries out a unique multi-university program of research in silicon materials. They provide critical materials physics and chemistry solutions that increase the yield, performance, and reliability of silicon materials and devices used for Giga Scale Integrated Circuits. The SiWEDS targets areas with great potential for true long-term breakthrough on the one hand, coupled with near term payoffs on the other. This multi-university I/UCRC is led by North Carolina State University and involves the University of California-Berkeley, Arizona State University, University of Arizona, University of South Florida, University of Washington, MIT, and Stanford University.
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
Planning Grant: I/UCRC for Next Generation Photovoltaics
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批准号:1238288
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项目类别:Standard Grant
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资助金额:$1.3万
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财政年份:2012
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负责人:Gerd Duscher
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依托单位:
NSF-Europe: Distribution, Segregation & Dose-Loss of Dopants in Deca-Nanometer SOI Structures using Ab inito Interface Dopant Analysis by Transmission Electron Microscopy
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批准号:0244724
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项目类别:Continuing Grant
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资助金额:$0.0万
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财政年份:2003
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负责人:Gerd Duscher
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依托单位:
海外基金