NER: Solid Electrolytic Flash Memory Devices

提案编号：0403218机构：Case Western reserve首席研究员：Tabib-Azar， massood标题：NER：固态电解闪存器件摘要：本探索性研究的主要目的是开发一类新的非易失性？基于固体电解质（如CuxS和ags）的存储器件这些器件基于纳米级金属线，通过将电流通过薄固体电解质薄膜上的电极生长而成。与机械开关非常相似，存储器的“1”和“0”状态是由电极之间的金属线的存在（即高导）状态或缺乏（即低导）状态给出的。所提出的器件具有简单的“横条”几何形状，使其成为具有高产量的大规模集成的理想选择。非易失性存储器是“嵌入式系统”的一个组成部分，在新兴系统中，操作系统存储在易于更新的非易失性存储器中，其重要性日益增加。在纳米物体的自组织和强制组装、自修复和可编程互连和断裂结以及用于传感和信息处理的弱耦合量子粒子方面，提出的研究还有许多其他应用。所提出的器件可用于研究和演示具有分形几何形状的线在具有有趣和重要的量子化电学性质的光学透明固体电解质薄膜中的实时生长。

PROPOSAL NO: 0403218INSTITUTION: Case Western ReservePRINCIPAL INVESTIGATOR: Tabib-Azar , MassoodTITLE: NER: Solid Electrolytic Flash Memory DevicesAbstract:The main objective of this exploratory study is to develop a new class of non-volatile ?memory devices based on solid-electrolytes such as CuxS and AgSThese devices are based on nanometer scale metallic wires grown by passing electric currents through electrodes on thin solid-electrolyte films. Very much like mechanical switches the "1" and "0" states of the memory is given by the presence (i.e., high conductance) state or lack (i.e., low conductance) state of a metallic wire between the electrodes. The proposed devices have a simple "cross-bar" geometry that makes them ideal for very large scale integration with high yield. Non-volatile memories are an integral part of "embedded systems" with growing importance in emerging systems where operating systems are stored in non-volatile memories for easy updating.There are many other applications of the proposed studies in self-organized and forced assembly of nano-objects self-healing and programmable interconnects and break junctions and in weakly-coupled quantum particles for sensing and information processing. The proposed devices can be used to study and demonstrate real-time growth of wires with fractal geometry in optically transparent solid electrolyte films with interesting and important quantized electrical properties.