Electrical Characterization of Micropipes and Other Defects in SiC and GaN Using Electron Beam Induced Current Measurements

使用电子束感应电流测量对 SiC 和 GaN 中的微管和其他缺陷进行电气表征

• 批准号: 9618654
• 负责人: Massood Tabib-Azar
• 金额: $ 5.64万
• 依托单位: Case Western Reserve University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1997
• 资助国家: 美国
• 起止时间: 1997-06-01 至 1998-11-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9618654&HistoricalAwards=false
• 关键词: Electrical; Characterization; Micropipes; Other; Defects

9618654 Tabib-Azar Silicon carbide offers many advantages in high power, and high temperature device applications. Extended defects in epitaxial GaN are the main factor limiting its lifetime and its laser application. Experimental studies of carrier diffusion lengths, surface recombination velocities, and extended defects in silicon carbide (4H, 6H, and 3C phases) and GaN will be carried out using electron beam induced current (EBIC) measurements as a function of temperature. In 6H-SiC, micropipes will be extensively studied (in terms of an effective carrier lifetime and mobility in their vicinity) and they will be mapped in p and n-type epitaxial materials. Electrical passivation of these defects by oxidation (and by A1N in the case of GaN) will also be studied. We expect to resolve micropipes and other defects with 0.5 (m dimensions. Wafers with appropriate epitaxial layers will be purchased from Cree Corporation and using in-house fabrication facilities, supplemented with NASA Lewis Research Center's capabilities, both p-n junction and Schottky diode structures will be fabricated. PI's characterization facility is well equipped with high- and low-frequency capacitance meters, device parameter analyzer, deep-level transient spectrometer, and other relevant equipment. In addition to the above facilities we will use the EBIC apparatus at NASA Lewis Research Center. ***

9618654 Tabib-Azar碳化硅在高功率和高温器件应用中具有许多优势。 外延GaN中的扩展缺陷是限制其寿命和激光应用的主要因素。 载流子扩散长度，表面复合速度，并在碳化硅（4 H，6 H和3C相）和GaN的扩展缺陷的实验研究将进行使用电子束感应电流（EBIC）测量作为温度的函数。 在6 H-SiC中，微管将被广泛研究（在其附近的有效载流子寿命和迁移率方面），并且它们将被映射到p型和n型外延材料中。还将研究通过氧化（和在GaN的情况下通过AlN）对这些缺陷的电钝化。 我们期望解决0.5微米尺寸的微管和其他缺陷。 将从Cree公司购买具有适当外延层的晶片，并使用内部制造设施，辅以NASA刘易斯研究中心的能力，将制造p-n结和肖特基二极管结构。 PI的表征设施配备了高、低频电容计、器件参数分析仪、深能级瞬态谱仪和其他相关设备。 除了上述设施外，我们还将使用NASA刘易斯研究中心的EBIC装置。 ***