NIRT: Electronic Devices from Nano-patterned Epitaxial Graphite

本研究的目的是确定纳米超薄外延石墨在低功耗、纳米级电子器件中的潜力。这项研究的灵感来自于碳纳米管独特的电子特性，以及所有纳米结构都具有这些基本特性的认识。合理的平面石墨（或石墨烯-石墨的单原子层）结构比纳米管有优势，因为设备之间的连接可以在单个光刻步骤中完成。研究方法是：1)在碳化硅衬底上制备扩展无缺陷的多层石墨烯，厚度为0.3—3nm；2)发展图案化方法；3)建立扩展膜和定义结构的电子和输运性质；4)开发化学修饰（掺杂）方法；5)演示简单设备；6)建立与硅基电子学集成的方法。节能和移动操作要求未来的电子产品注重低功耗和高密度。石墨基电子产品具有大规模集成弹道（无耗散）器件的潜力，可以满足这些需求。该计划为纳米科学/工程博士生提供深入的培训，并在几个层面上提供研究/教育机会。通过乔治亚理工学院由教育专业人士设计的项目，高中教师可以在研究实验室工作。美国本科生可以通过两个NSF-REU项目参与研究（格鲁吉亚有额外的机会）。对佐治亚理工学院纳米科学与技术项目课程的贡献将达到更广泛的受众。最后，将继续关注招募代表性不足的群体进入纳米科学和工程领域。

The objective of this research is to establish the potential of nano-patterned ultrathin epitaxial graphite for low-power, nanometer-scale electronic devices. The research is inspired by the exceptional electronic properties of carbon nanotubes, and the realization that these essential properties are shared by all nanographitic structures. Rationally patterned planar graphite (or graphene - a single atomic layer of graphite) structures have advantages over nanotubes in that connections between devices can be accomplished in a single lithographic step. The research approach is to 1) Produce extended defect-free multilayered graphene, 0.3--3 nm thick, on silicon carbide substrates; 2) Develop patterning methods; 3) Establish electronic and transport properties of extended films and defined structures; 4) Develop chemical modification (doping) methods; 5) Demonstrate simple devices; and 6) Establish methods to integrate with Si-based electronics. Energy conservation and mobile operation demand that future electronics focus on low power and high-density. Graphite-based electronics holds the potential for large-scale integration of ballistic (dissipationless) devices that could satisfy these needs. This program provides in-depth training for Ph.D. students in nanoscience/engineering, and research/education opportunities at several levels. Through Georgia Tech programs designed by education professionals, high-school teachers can be hosted in research laboratories. U.S. undergraduates can participate in the research through two NSF-REU programs (with additional opportunities available in Georgia). Contributions to courses within Georgia Tech's Nanoscience and Technology program will reach a wider audience. Finally, a focus on recruitment of underrepresented groups into nanoscience and engineering will be maintained.