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IMR: Acquisition Of An Electron Paramagnetic Resonance Spectrometer For Defect Analysis Research And Materials Physics Education

IMR: Acquisition Of An Electron Paramagnetic Resonance Spectrometer For Defect Analysis Research And Materials Physics Education
IMR:购买电子顺磁共振波谱仪用于缺陷分析研究和材料物理教育
批准号:
0414141
负责人:
Mary Ellen Zvanut
金额:
$0.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2004
资助国家:
美国
项目状态:
已结题
起止时间:
2004-08-01 至 2006-07-31

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中文摘要
翻译
EPR因其能够确定各种材料中点缺陷的详细电子结构而闻名。几十年的研究已经产生了一个巨大的缺陷数据库,所以今天这项技术也可以被用作一种通用的表征工具。这项技术的两面性使其能够用于重大研究调查以及基础教育和培训。学习金刚石薄膜和化学的学生探索过渡金属络合物中的电子转移反应,已经使用该仪器进一步学习。灵敏度对我们来说是一个特别重要的问题,因为电子材料中的缺陷密度通常低于1/105,而目前系统的信噪比仅为其最佳值的40%。这导致了广泛的信号平均,并限制了我们检测特定中心的能力。新系统将最大限度地减少数据采集时间,并允许观察到更少的缺陷。我们利用EPR的研究直接影响半导体行业,因为我们对生产高功率、高频应用所需的高质量材料所需的本征缺陷和杂质的低浓度有了基本的了解。电子顺磁共振被用于研究各种材料中的电子缺陷。这项技术被用于重大研究调查以及基础教育和培训。我们正在努力提高我们仪器的检测极限,以便研究在较低浓度水平下发生的缺陷。我们利用EPR的研究直接影响半导体行业,因为我们对生产高功率、高频应用所需的高质量材料所需的本征缺陷和杂质的低浓度有了基本的了解。
英文摘要
EPR is known for its ability to determine the detailed electronic structure of point defects in a wide variety of materials. Decades of investigations have produced a huge database of defects so that today the technique may also be used as a general characterization tool. The dual nature of the technique enables its use for major research investigations as well as for basic education and training. Students studying diamond thin films and chemistry students probing electron transfer reactions in transition metal complexes have used the instrument to further their studies. Sensitivity is a particularly significant issue for us because defect densities in electronic materials are generally below 1 part in 105, and the signal-to-noise ratio of the present system is only 40% of its optimal value. This results in extensive signal averaging and limits our ability to detect certain centers. The new system will minimize data acquisition time and allow for lower numbers of defects to be observed. Our studies utilizing EPR directly affect the semiconductor industry by contributing a basic understanding of the low concentration of intrinsic defects and impurities required to produce the high quality material necessary for the high power, high frequency applications. Electronic paramagnetic resonance is used to study electronic defects in a wide variety of materials. The technique is used for major research investigations as well as for basic education and training. We are working to improve the detection limits of our instruments in order to study defects that occur at lower concentration levels. Our studies utilizing EPR directly affect the semiconductor industry by contributing a basic understanding of the low concentration of intrinsic defects and impurities required to produce the high quality material necessary for the high power, high frequency applications.
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Charge Transfer in Oxide Semiconductors from a Defect's Point of View
  • 批准号:
    1904325
  • 项目类别:
    Standard Grant
  • 资助金额:
    $41.35万
  • 财政年份:
    2019
  • 负责人:
    Mary Ellen Zvanut
  • 依托单位:
GOALI:A Study of Point Defects in Thick, Free-Standing Acceptor-Doped GaN
  • 批准号:
    1606765
  • 项目类别:
    Standard Grant
  • 资助金额:
    $40.2万
  • 财政年份:
    2016
  • 负责人:
    Mary Ellen Zvanut
  • 依托单位:
GOALI: Charge Transfer in Semi-Insulating GaN
  • 批准号:
    1308446
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $36.8万
  • 财政年份:
    2013
  • 负责人:
    Mary Ellen Zvanut
  • 依托单位:
Understanding p-Type Doping in GaN: the Role of Mg
  • 批准号:
    1006163
  • 项目类别:
    Standard Grant
  • 资助金额:
    $22.99万
  • 财政年份:
    2010
  • 负责人:
    Mary Ellen Zvanut
  • 依托单位:
海外基金