NIRT: Extremely-Mismatched Materials for Advanced Nanoscale Devices

[0506950]该项目涉及基于极端不匹配材料（如InAs， InSb）的高性能纳米级电子器件的材料和器件研究。本文将研究两种获得高质量InAs、InSb和III-Sb异质结构的方法：利用固相外延和再结晶直接在绝缘衬底上生长纳米级、高度晶格不匹配的层，以及利用晶格匹配外延薄膜通过晶片键合创造复合衬底，从而使外延InAs、InSb和III-Sb异质结构能够随后再生。表面钝化也是纳米器件中的一个关键问题；将研究新的非水表面钝化方案。器件研究包括用于逻辑的纳米级晶体管以及用于毫米波和太赫兹传感的异质结构反向隧道二极管的实验和理论研究。两种晶体管结构-积极缩放的InAs和InSb沟道场效应晶体管，以及场辅助横向隧道纳米晶体管-将探索使用在可缩放绝缘衬底上生长的极不匹配的材料。该项目包括在团队环境中对本科生和研究生进行以研究为基础的培训。学生将在国内和国际场合展示他们的作品，以提高他们的沟通和演讲技巧，为研究事业做准备。该研究的跨学科性质有助于案例研究的发展和课程丰富的例子，例如，向学生介绍材料科学，表面科学和化学，工艺和材料集成以及半导体器件物理方面的问题。该研究将为材料科学提供基础和新知识，并对电子系统设计和环境与遥感产生深远影响。

0506950FayThis program involves materials and device research in high-performance nanoscale electronic devices based on extremely-mismatched materials (e.g. InAs, InSb). Two approaches for achieving high quality InAs, InSb, and III-Sb device heterostructures will be investigated: growth of nanometer-scale, highly lattice mismatched layers directly on insulating substrates using solid-phase epitaxy and recrystallization, and creation of composite substrates by wafer bonding using lattice-matched epitaxial films to enable subsequent regrowth of epitaxial InAs, InSb, and III-Sb heterostructures. Surface passivation is also a critical issue in nanodevices; novel non-aqueous surface passivation schemes will be investigated. The device research includes experimental and theoretical study of nanoscale transistors for logic as well as heterostructure backward tunnel diodes for millimeter-wave and THz sensing. Two transistor architectures-aggressively-scaled InAs and InSb channel field-effect transistors, and field-assisted lateral tunneling nanotransistors-will be explored, using extremely-mismatched materials grown on scalable insulating substrates. The program includes research-based training of undergraduate and graduate students in a team environment. Students will present their work at national and international venues to enhance their communication and presentation skills in preparation for research careers. The cross-disciplinary nature of the research lends itself to the development of case studies and examples for curricular enrichment, e.g. a means to introduce students to issues in materials science, surface science and chemistry, process and materials integration, and semiconductor device physics. The research will provide fundamental and new knowledge in materials science, as well as have far-reaching impact on electronic systems design and environmental and remote sensing.