CAREER: Micromachining of Gallium Nitride and Related Materials for Microwave and Optoelectronic Applications

职业：用于微波和光电应用的氮化镓及相关材料的微加工

• 批准号: 9875600
• 负责人: Patrick Fay
• 金额: $ 20万
• 依托单位: University of Notre Dame
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1999
• 资助国家: 美国
• 起止时间: 1999-06-01 至 2004-11-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9875600&HistoricalAwards=false
• 关键词: CAREER; Micromachining; Gallium; Nitride; Related

9875600FayAn integrated plan for career development based on research on micromachining of GaN and related materials (e.g. A1GaN, InGaN, InA1N) is proposed. Three micromachined devices for microwave and optoelectronic applications that can only be realized using micromachining approaches are proposed to demonstrate the technology: an inline transmissive microwave power sensor, a piezoelectrically assisted microwave micromechanical switch, and an arbitrary curvilin-ear mirror surface for the realization of surface emitting blue heterostructure diodes. The re-search work proposed includes development of the necessary micromachining fabrication pro-cesses, including the development and implementation of a computerized submersible angle-controlled stage for generating arbitrarily-shaped etch sidewalls using photoelectrochemical wet etching. In addition, a full characterization of the etch reaction kinetics will be performed, and a process model developed for inclusion into the control software for the angle-controlled stage in order to etch curved as well as arbitrarily angled surfaces. The thermal conductivity and thermo-electric properties of GaN and A1GaN as a function of A1 mole fraction will also be investigated experimentally both in order to optimize the material selection for the inline transmissive power sensor, as well as to provide additional experimental insight into the electronic band structure of this nascent material system. The development and demonstration of a viable micromachining technology in this material system will have wide-ranging impact on the fields of high-power and high-temperature microwave electronics as well as short-wavelength optoelectronics. The inline transmissive power sensor is designed to be integrable with high-power GaN-based HEMTs, providing for the ability to directly measure amplifier output power over very wide bandwidths without the need for large coupling structures. The piezoelectrically-assisted micro-wave micromechanical switch is expected to provide the same benefits as micro-electro-me-chanical switches in Si and other III-V materials, but with the added benefit of lower activation voltage due to the piezoelectric properties of GaN and integrability with high-speed, high-power GaN HEMTs. Finally, the arbitrary curvilinear mirror surface technology will allow the imple-mentation of surface-emitting heterostructure diodes to greatly ease the difficulty in packaging these devices for high-density optical storage and display applications. In addition to providing a more easily packaged surface-emitting structure rather than an edge-emitting diode structure, the ability to tailor the curvature of the mirror surface through the use of the angle-controlled etching stage also permits the control of the stigmation of the far-field intensity pattern of the emitter, eliminating the need for bulky and difficult-to-align external optical components to circularize the light beam.The educational programs that are included within the scope of activities of this research project include numerous opportunities for undergraduate students to participate directly in research activities. These opportunities include participation in the development of micromachining fabrication processes, device fabrication and verification, and microwave and optoelectronic testing of the finished devices. The research results originating from this work will also be incorporated into undergraduate course work; the Integrated Optoelectronics, Wire-less Communications and Microwave Measurements, and Electronic Circuits courses taught by Prof. Fay will all benefit directly through inclusion of results from this work. Students will also be given the opportunity to be involved in this project through the senior design capstone course in the department; the numerous opportunities for fabrication process design as well as imple-mentation of the computerized angle-controlled etching stage are well-suited for year-long undergraduate design projects. An additional program to be supported by this program is the expansion of Prof. Fay's Electronics Hobby Evenings program to include more students from other departments and colleges across the university as well as to include interested high school students and community members.***

提出了基于GAN和相关材料的微加工研究的9875600Fayan综合计划（例如A1gan，Ingan，Ina1n）。提出了仅使用微加工方法实现的微波炉和光电应用的三种微加工设备，以证明该技术：一种内联的传播微波电源传感器，一种压电的微波微波微波化的微波交换机，以及一个任意的曲面镜面镜面，以实现表面上的蓝色蓝色蓝孔的现实表面。提出的重新搜索工作包括开发必要的微加工制造专业蛋糕，包括开发和实施计算机化的潜水角度控制阶段，用于使用光电化学湿蚀刻来生成任意形状的蚀刻侧壁。此外，还将进行蚀刻反应动力学的完整表征，并开发出一个过程模型，用于将角度控制阶段纳入控制软件，以便蚀刻弯曲以及任意角度的表面。 GAN和A1GAN随着A1摩尔分数的函数的热导率和热电力特性也将进行实验研究，以优化内联透射功率传感器的材料选择，并为这种新生材料的电子带结构提供更多的实验性洞察力。该材料系统中可行的微加工技术的开发和演示将对高功率和高温微波电子设备以及短波长光电子的领域产生广泛的影响。内联透射功率传感器设计为与高功率基于GAN的HEMT相结合，从而能够直接在非常宽的带宽上直接测量放大器输出功率，而无需大型耦合结构。预计，预防性微波微机械开关将提供与SI和其他III-V材料中的微电 - 电动机趋化开关相同的好处，但由于GAN的压电性能以及与高速，高速，高电位式载体的集成能力，因此较低激活电压的额外好处。最后，任意的曲线镜面技术将使表面发射异质结构二极管的插入极大地减轻了将这些设备包装用于高密度光学存储和显示应用程序的困难。除了提供更容易包装的表面发射结构，而不是提供边缘发射二极管结构之外，通过使用角度控制的蚀刻阶段来量身定制镜面曲率的能力，还可以控制远距离的射击运动，从而消除了远距离的外部组合，从而将其纳入了循环范围。该研究项目的活动包括本科生直接参与研究活动的许多机会。这些机会包括参与微加工制造过程，设备制造和验证以及完成设备的微波炉和光电测试。源自这项工作的研究结果也将纳入本科课程工作； Fay教授教授的集成光电子，无线通信和微波测量值以及电子电路课程将通过包括这项工作的结果直接受益。还将有机会通过该系的高级设计顶石课程参与该项目；制造过程设计的众多机会以及计算机角度控制的蚀刻阶段的插入非常适合一年的本科设计项目。该计划要支持的另一个计划是Fay教授的电子爱好之夜计划的扩展，包括来自大学其他部门和学院的更多学生，并包括有兴趣的高中生和社区成员。*** ***