Wireless Communications as a Catalyst for Curriculum Integration: A New Microwave Measurement and Design Laboratory
无线通信作为课程整合的催化剂:新的微波测量和设计实验室
基本信息
- 批准号:9850988
- 负责人:
- 金额:$ 7.37万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:1998
- 资助国家:美国
- 起止时间:1998-06-01 至 2000-05-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
An innovative microwave design and measurements laboratory for undergraduates is being developed. This laboratory facility and its associated laboratory course is a highly multidisciplinary project that draws upon the fundamentals of semiconductor device physics, electromagnetic field theory, electronic circuit design, and communication system design. By integrating these four major areas into one laboratory course, this project directly addresses one of the most pressing problems in engineering education, the tendency of students to view their coursework as a collection of narrow specialties rather than an integrated whole. This course, in which the students will design, fabricate, test, and analyze microwave circuitry for wireless communication systems, will cut across these traditional areas of specialty and provide a broad based educational opportunity. State-of-the-art computer aided design and simulation software, coupled with modern computer-controlled microwave measurement equipment, will enable the students to learn the intricacies of microwave circuit design and testing while at the same time strengthening their grasp of the fundamentals of semiconductor device operation, electromagnetic field theory, and circuit design. The course will be taught in a full-time laboratory setting, with student measurements and demonstrations in every class meeting to infuse the students with enthusiasm for this exciting area of work.
正在建设一个创新的本科生微波设计与测量实验室。这个实验室设施及其相关的实验课程是一个高度跨学科的项目,它借鉴了半导体器件物理、电磁场理论、电子电路设计和通信系统设计的基础知识。通过将这四个主要领域整合到一个实验课程中,该项目直接解决了工程教育中最紧迫的问题之一,即学生倾向于将他们的课程视为狭窄专业的集合,而不是一个完整的整体。在本课程中,学生将设计,制造,测试和分析无线通信系统的微波电路,将跨越这些传统的专业领域,并提供广泛的教育机会。最先进的计算机辅助设计和仿真软件,加上现代计算机控制的微波测量设备,将使学生了解微波电路设计和测试的复杂性,同时加强他们对半导体器件工作,电磁场理论和电路设计基础的掌握。该课程将在一个全日制的实验室环境中进行,学生在每次课堂上进行测量和演示,以激发学生对这一令人兴奋的工作领域的热情。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Patrick Fay其他文献
Temperature Dependence of High Frequency and Noise Performance of Sb-Heterostructure Millimeter-Wave Detectors
锑异质结构毫米波探测器的高频和噪声性能的温度依赖性
- DOI:
10.1109/led.2007.895377 - 发表时间:
2007 - 期刊:
- 影响因子:4.9
- 作者:
N. Su;Ze Zhang;J. Schulman;Patrick Fay - 通讯作者:
Patrick Fay
Low-Loss D-Band SIW Power Divider for Integrated Systems
适用于集成系统的低损耗 D 频段 SIW 功率分配器
- DOI:
- 发表时间:
2024 - 期刊:
- 影响因子:0
- 作者:
Weifeng Wu;Xiaopeng Wang;Lei Li;James C. M. Hwang;Patrick Fay - 通讯作者:
Patrick Fay
1.7-kV Vertical GaN p-n Diode with Triple-Zone Graded Junction Termination Extension Formed by Ion-Implantation
具有通过离子注入形成的三区渐变结终端扩展的 1.7kV 垂直 GaN p-n 二极管
- DOI:
- 发表时间:
2023 - 期刊:
- 影响因子:0
- 作者:
Y. Duan;Jingshan Wang;Andy Xie;Zhongtao Zhu;Patrick Fay - 通讯作者:
Patrick Fay
Late breaking abstracts for the 29th ESPEN Congress
- DOI:
10.1016/j.eclnm.2007.08.001 - 发表时间:
2007-10-01 - 期刊:
- 影响因子:
- 作者:
Yu Duan;Jingshan Wang;Andy Xie;Zhongtao Zhu;Patrick Fay - 通讯作者:
Patrick Fay
A D-band Frequency-Doubling Distributed Amplifier Through Monolithic Integration of SiC SIW and GaN HEMTs
通过 SiC SIW 和 GaN HEMT 单片集成的 D 频段倍频分布式放大器
- DOI:
- 发表时间:
2023 - 期刊:
- 影响因子:0
- 作者:
Lei Li;Tianze Li;Patrick Fay;James C. M. Hwang - 通讯作者:
James C. M. Hwang
Patrick Fay的其他文献
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{{ truncateString('Patrick Fay', 18)}}的其他基金
ECCS-EPSRC: Advanced III-N Devices and Circuit Architectures for mm-Wave Future Generation Wireless Communication
ECCS-EPSRC:用于毫米波下一代无线通信的先进 III-N 器件和电路架构
- 批准号:
2303897 - 财政年份:2023
- 资助金额:
$ 7.37万 - 项目类别:
Standard Grant
Collaborative Research: High-frequency, High-power Amplifier Based on Distributed Coupling of GaN HEMTs Through a SiC Substrate-integrated Waveguide
合作研究:基于 SiC 衬底集成波导的 GaN HEMT 分布式耦合的高频、高功率放大器
- 批准号:
2132329 - 财政年份:2021
- 资助金额:
$ 7.37万 - 项目类别:
Standard Grant
Advanced Tunneling-Based Detectors and Imaging Systems for Millimeter-Wave and THz Sensing and Imaging
用于毫米波和太赫兹传感和成像的先进隧道探测器和成像系统
- 批准号:
1508057 - 财政年份:2015
- 资助金额:
$ 7.37万 - 项目类别:
Standard Grant
Collaborative Research: Characterization of Traps in GaInAs/GaAsSb Multiple Quantum Well Structures
合作研究:GaInAs/GaAsSb 多量子阱结构中陷阱的表征
- 批准号:
0906842 - 财政年份:2009
- 资助金额:
$ 7.37万 - 项目类别:
Continuing Grant
Advanced Sensors for Millimeter-Wave Detection and Imaging [UND_FY06_008]
用于毫米波检测和成像的先进传感器 [UND_FY06_008]
- 批准号:
0610169 - 财政年份:2006
- 资助金额:
$ 7.37万 - 项目类别:
Standard Grant
NIRT: Extremely-Mismatched Materials for Advanced Nanoscale Devices
NIRT:用于先进纳米级器件的极其不匹配的材料
- 批准号:
0506950 - 财政年份:2005
- 资助金额:
$ 7.37万 - 项目类别:
Standard Grant
A Novel High-Speed Electrometer for Nanoscale Electronic Device Research
用于纳米电子器件研究的新型高速静电计
- 批准号:
0100075 - 财政年份:2001
- 资助金额:
$ 7.37万 - 项目类别:
Standard Grant
CAREER: Micromachining of Gallium Nitride and Related Materials for Microwave and Optoelectronic Applications
职业:用于微波和光电应用的氮化镓及相关材料的微加工
- 批准号:
9875600 - 财政年份:1999
- 资助金额:
$ 7.37万 - 项目类别:
Standard Grant
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