Advanced Sensors for Millimeter-Wave Detection and Imaging [UND_FY06_008]
用于毫米波检测和成像的先进传感器 [UND_FY06_008]
基本信息
- 批准号:0610169
- 负责人:
- 金额:$ 16.81万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2006
- 资助国家:美国
- 起止时间:2006-09-01 至 2013-08-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Millimeter-wave detection and imaging is a rapidly developing field with both commercial and national security applications. This research is focused on the design and demonstration of high performance backward diode detectors and imaging arrays. The heterostructure backwards diode has been shown to outperform existing detectors at room temperature. The devices are promising for applications in security, avionics and signal detection, where they can image through smoke, haze, and opaque materials such as fabric for remote chemical and explosion detection. In addition to imaging, the sensors are part of systems for electronic data collection, in detection, categorization and analysis of signals. The detectors do not require cooling to obtain major sensitivity enhancements, which reduces cost and increases efficiency. Improvements in detectors and arrays come through an interdisciplinary program of device design and numerical simulation, coupled with fabrication and measurement-based models for the devices. The project engages undergraduate and graduate students and will generate a series of case students for curricular enrichment. The continued development of semiconductor materials for electronic applications benefits a broad spectrum of disciplines and applications. Spin-off applications of this sensor technology include communication, high-performance wireless networking, medical imaging, astronomy and general metrology.
毫米波探测和成像是一个快速发展的领域,具有商业和国家安全应用。 本研究的重点是高性能后向二极管探测器和成像阵列的设计和演示。 异质结构反向二极管已被证明在室温下优于现有的检测器。 这些设备在安全,航空电子和信号检测方面的应用前景广阔,它们可以通过烟雾,烟雾和不透明材料(如织物)进行远程化学和爆炸检测。 除了成像,传感器是电子数据收集系统的一部分,用于信号的检测,分类和分析。 探测器不需要冷却来获得主要的灵敏度增强,这降低了成本并提高了效率。 探测器和阵列的改进是通过设备设计和数值模拟的跨学科计划,再加上设备的制造和基于测量的模型。 该项目吸引了本科生和研究生,并将产生一系列案例学生,以丰富课程。 用于电子应用的半导体材料的持续发展使广泛的学科和应用受益。 这种传感器技术的衍生应用包括通信、高性能无线网络、医学成像、天文学和通用计量学。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Patrick Fay其他文献
Temperature Dependence of High Frequency and Noise Performance of Sb-Heterostructure Millimeter-Wave Detectors
锑异质结构毫米波探测器的高频和噪声性能的温度依赖性
- DOI:
10.1109/led.2007.895377 - 发表时间:
2007 - 期刊:
- 影响因子:4.9
- 作者:
N. Su;Ze Zhang;J. Schulman;Patrick Fay - 通讯作者:
Patrick Fay
1.7-kV Vertical GaN p-n Diode with Triple-Zone Graded Junction Termination Extension Formed by Ion-Implantation
具有通过离子注入形成的三区渐变结终端扩展的 1.7kV 垂直 GaN p-n 二极管
- DOI:
- 发表时间:
2023 - 期刊:
- 影响因子:0
- 作者:
Y. Duan;Jingshan Wang;Andy Xie;Zhongtao Zhu;Patrick Fay - 通讯作者:
Patrick Fay
Low-Loss D-Band SIW Power Divider for Integrated Systems
适用于集成系统的低损耗 D 频段 SIW 功率分配器
- DOI:
- 发表时间:
2024 - 期刊:
- 影响因子:0
- 作者:
Weifeng Wu;Xiaopeng Wang;Lei Li;James C. M. Hwang;Patrick Fay - 通讯作者:
Patrick Fay
Late breaking abstracts for the 29th ESPEN Congress
- DOI:
10.1016/j.eclnm.2007.08.001 - 发表时间:
2007-10-01 - 期刊:
- 影响因子:
- 作者:
Yu Duan;Jingshan Wang;Andy Xie;Zhongtao Zhu;Patrick Fay - 通讯作者:
Patrick Fay
A D-band Frequency-Doubling Distributed Amplifier Through Monolithic Integration of SiC SIW and GaN HEMTs
通过 SiC SIW 和 GaN HEMT 单片集成的 D 频段倍频分布式放大器
- DOI:
- 发表时间:
2023 - 期刊:
- 影响因子:0
- 作者:
Lei Li;Tianze Li;Patrick Fay;James C. M. Hwang - 通讯作者:
James C. M. Hwang
Patrick Fay的其他文献
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{{ truncateString('Patrick Fay', 18)}}的其他基金
ECCS-EPSRC: Advanced III-N Devices and Circuit Architectures for mm-Wave Future Generation Wireless Communication
ECCS-EPSRC:用于毫米波下一代无线通信的先进 III-N 器件和电路架构
- 批准号:
2303897 - 财政年份:2023
- 资助金额:
$ 16.81万 - 项目类别:
Standard Grant
Collaborative Research: High-frequency, High-power Amplifier Based on Distributed Coupling of GaN HEMTs Through a SiC Substrate-integrated Waveguide
合作研究:基于 SiC 衬底集成波导的 GaN HEMT 分布式耦合的高频、高功率放大器
- 批准号:
2132329 - 财政年份:2021
- 资助金额:
$ 16.81万 - 项目类别:
Standard Grant
Advanced Tunneling-Based Detectors and Imaging Systems for Millimeter-Wave and THz Sensing and Imaging
用于毫米波和太赫兹传感和成像的先进隧道探测器和成像系统
- 批准号:
1508057 - 财政年份:2015
- 资助金额:
$ 16.81万 - 项目类别:
Standard Grant
Collaborative Research: Characterization of Traps in GaInAs/GaAsSb Multiple Quantum Well Structures
合作研究:GaInAs/GaAsSb 多量子阱结构中陷阱的表征
- 批准号:
0906842 - 财政年份:2009
- 资助金额:
$ 16.81万 - 项目类别:
Continuing Grant
NIRT: Extremely-Mismatched Materials for Advanced Nanoscale Devices
NIRT:用于先进纳米级器件的极其不匹配的材料
- 批准号:
0506950 - 财政年份:2005
- 资助金额:
$ 16.81万 - 项目类别:
Standard Grant
A Novel High-Speed Electrometer for Nanoscale Electronic Device Research
用于纳米电子器件研究的新型高速静电计
- 批准号:
0100075 - 财政年份:2001
- 资助金额:
$ 16.81万 - 项目类别:
Standard Grant
CAREER: Micromachining of Gallium Nitride and Related Materials for Microwave and Optoelectronic Applications
职业:用于微波和光电应用的氮化镓及相关材料的微加工
- 批准号:
9875600 - 财政年份:1999
- 资助金额:
$ 16.81万 - 项目类别:
Standard Grant
Wireless Communications as a Catalyst for Curriculum Integration: A New Microwave Measurement and Design Laboratory
无线通信作为课程整合的催化剂:新的微波测量和设计实验室
- 批准号:
9850988 - 财政年份:1998
- 资助金额:
$ 16.81万 - 项目类别:
Standard Grant
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