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Investigation of Semiconductors Under Extreme Strain for High Strain Nanoscale Piezoresistive Sensors and Next Generation CMOS

Investigation of Semiconductors Under Extreme Strain for High Strain Nanoscale Piezoresistive Sensors and Next Generation CMOS
针对高应变纳米级压阻传感器和下一代 CMOS 的极端应变半导体的研究
批准号:
0524316
负责人:
Toshikazu Nishida
金额:
$0.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2005
资助国家:
美国
项目状态:
已结题
起止时间:
2005-09-01 至 2009-08-31

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中文摘要
翻译
这项研究的目的是研究微机械压阻传感器的常见传感物理和最新的应变半导体互补金属氧化物半导体(CMOS)技术。该方法是通过实验研究p型和n型硅和锗在比以前描述的更高的应力(1 Gpa)下的压阻,探索在这些高应力下压阻的基本贡献,并阐明在这些极端条件下的电气可靠性权衡。研究目标的成功完成将使人们从根本上了解高应力下纳米器件的迁移率增强机制,在高应力下,依赖于应力的散射和量子限制会影响载流子的传输,并将确定超过该应力极限的泄漏、隧道和1/f噪声变得有害。迫切需要对传感器和应变半导体中的压阻进行更精确的建模和更好的理解。这样的理解可能会促进高精度传感器和纳米级芯片上系统的融合的新时代。教育计划的指导原则是将研究纳入对K-12教师的继续教育,这些教师处于培养未来科学家和工程师在大学取得成功并为社会做出贡献的第一线。与包括学生教师咨询委员会、教师和行政部门在内的利益相关者合作,将调查最佳实践,以便在时间有限的教师和工作人员之间建立可行的互动。人们希望,精密传感器和纳米级CMOS之间的融合将为学生和教师提供一个鼓舞人心的工具,激发他们的兴趣。
英文摘要
The objective of this research to investigate the common transduction physics of micromachined piezoresistive sensors and state-of-the-art strained semiconductor complementary metal-oxide-semiconductor (CMOS) technology. The approach is to experimentally investigate piezoresistance in p- and n-type silicon and germanium at much higher stresses ( 1 GPa) than previously characterized, to explore the fundamental contributions to piezoresistivity at these high stresses, and to elucidate electrical reliability tradeoffs under these extreme conditions. Successful completion of the research objectives will provide fundamental understanding of the mechanisms of mobility enhancement in nano-scale devices at high stresses where stress-dependent scattering and quantum confinement affect the carrier transport and will identify stress limits above which leakage, tunneling, and 1/f noise become detrimental. An imminent need exists for more precise modeling and better understanding of piezoresistance in sensors and strained semiconductors. Such understanding may facilitate a new era of convergence of high precision sensors and nano-scale CMOS system on chip. A guiding principle for the education plan is to integrate research into continuing education for K-12 teachers who are at the frontline for preparing future scientists and engineers to succeed at universities and contribute to society. In collaboration with the stakeholders including the student faculty advisory committee, teachers, and administration, best practices will be investigated for establishing workable interactions between time-constrained teachers and staff. It is hoped that the convergence between precision sensors and nanoscale CMOS will provide an inspiring vehicle for sparking interest among students and teachers.
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Phase II IUCRC at University of Florida: Center for Multi-functional Integrated System Technology (MIST)
  • 批准号:
    1939009
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $75.0万
  • 财政年份:
    2020
  • 负责人:
    Toshikazu Nishida
  • 依托单位:
Ferroelectric HfO2 on Germanium Tunnel Junctions Towards Sub-Femto Joule Switching
  • 批准号:
    1610387
  • 项目类别:
    Standard Grant
  • 资助金额:
    $40.0万
  • 财政年份:
    2016
  • 负责人:
    Toshikazu Nishida
  • 依托单位:
I/UCRC Phase I: Multi-functional Integrated System Technology (MIST)
  • 批准号:
    1439644
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $55.75万
  • 财政年份:
    2014
  • 负责人:
    Toshikazu Nishida
  • 依托单位:
Planning Grant: I/UCRC for Multi-functional Integrated System Technology
  • 批准号:
    1338901
  • 项目类别:
    Standard Grant
  • 资助金额:
    $1.6万
  • 财政年份:
    2013
  • 负责人:
    Toshikazu Nishida
  • 依托单位:
海外基金