SBIR Phase I: Improved X-band T/R Modules for High-Temperature/Power Operation

这个小型企业创新研究第一阶段项目将开发一种基于混合衬底的Si-on-SiC，用于X波段电路。这种创新的方法结合了化合物半导体器件的优势与硅处理和电路技术的现有优势，形成混合电路，这将使先进的高频（X波段）放大系统。混合电路将使用高导热混合基板制成，以便将X波段器件中产生的热量有效地从有源区带走。这种独特的混合衬底是Si-on-SiC混合晶片，由非常薄的Si膜（约1微米）组成，该膜从Si晶片上切下并附着在SiC晶片上。与完全分离的系统的传统方法相比，将X波段器件与Si信号处理电子器件紧密靠近地放置降低了信号噪声，而混合晶片的SiC将热量从X波段和Si电子器件中芯吸走，从而允许器件的功率密度增加、每单位面积器件的封装密度增加或两者的某种组合。 此外，在混合晶片的Si层中制造的电子器件具有SOI电子器件的所有优点：在高温下工作的能力、抗寄生电流和抗辐射性。正在开发的一般混合电路技术也可以应用于功率转换系统或任何基于SOI的电子器件经受高功率和高温水平的应用。仅在2004年，全世界就生产了大约250万个直径为200 mm的等效SOI晶片。与传统SOI相比，混合晶片提供了上级热性能，同时保持了SOI相对于体硅的现有优势。该项目将改进用于军事应用的X波段雷达系统。一个典型的机载X波段雷达天线由一到三千个发射/接收（T/R）模块组成，每个模块都有自己的高频GaAs放大器，产生大约10 W的功率。这使得热量管理成为一个关键问题。对于军事应用来说，系统的总体尺寸也是一个重要的问题。考虑到雷达系统在T/R组件越多时性能越好，最小化T/R组件尺寸的需求是至关重要的。该项目解决了热管理和T/R模块尺寸减小的可能解决方案。

This Small Business Innovation Research Phase I project will develop a hybrid substrate based, Si-on-SiC, for application to X-band circuitry. This innovative approach incorporates the advantages of compound semiconductor devices with the incumbent advantages of Si processing and circuit technology to form hybrid circuits which will enable advanced high-frequency (X-band) amplification systems. The hybrid circuits will be made using a highly-thermally conductive hybrid substrate, so that the heat generated in the X-band devices will be efficiently carried away from the active area. This unique hybrid substrate is a Si-on-SiC hybrid wafer comprised of a very thin Si membrane (~1 micron) that has been sliced from a Si wafer and attached to a SiC wafer. Incorporating an X-band device in close proximity with Si signal processing electronics reduces signal noise compared to the tradional approach of completely seperated systems, while the SiC of the hybrid wafer wicks heat away from both the X-band and Si electronics, thereby allowing for increased power-density of devices, increased packing density of devices per unit area, or some combination of the two. Furthermore, electronics fabricated in the Si layer of the hybrid wafer have all of the advantages of SOI electronics: the ability to operate at high temperatures, resistance to parasitic currents and radiation hardness.The general hybrid circuit technology being developed could also be applied to power conversion systems or any application where SOI based electronics are subjected to high power and high temperature levels. Approximately 2.5 million 200 mm diameter equivalent SOI wafers were produced worldwide in the year 2004 alone. The hybrid wafers offer superior thermal performance compared to conventional SOI while maintaining the incumbent advantages of SOI over bulk Si. This project will lead to improved X-band radar systems for military applications. A typical airborne x-band radar antenna consists of one to three thousand transmit/receive(T/R) modules, each with its own high frequency GaAs amplifier producing on the order of 10 W of power. This makes heat management a critical issue. Overall system size is also an important issue for military applications. Given that a radar system will perform better with more T/R modules, the need to minimize T/R module size is paramount. This project addresses possible solutions to both heat management and T/R module size reduction.