Fabrication of the NEM and NEMFET Logic Gates via Top-Down and Bottom-up Processes
Fabrication of the NEM and NEMFET Logic Gates via Top-Down and Bottom-up Processes
批准号:
0801334
负责人:
H S Philip Wong
金额:
$33.0万
依托单位:
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2008
资助国家:
美国
项目状态:
已结题
起止时间:
2008-06-01 至 2011-08-31
中文摘要
提案编号0801334通过自顶向下和自底向上工艺制造NEM和NEMFET逻辑门H.- S. Philip Wonghspwong@stanford. edu斯坦福大学250字摘要:本研究的目的是首次展示基于纳机电(NEM)开关和NEM场效应晶体管的超低功耗逻辑门。提出的器件将解决日益严重的泄漏和静态功耗的CMOS技术的问题。该方法是同时追求基于光刻的自顶向下工艺和基于纳米线/碳纳米管的自底向上技术。拟议的研究与EPDT计划保持一致,该计划旨在提高对基于电子和机电原理的设备和组件的基本理解。智力的优点在于实验实现极低功耗ULSI逻辑系统结合两个传统的不同领域(MEMS和CMOS逻辑)。MEMS器件将扩展到纳米级。所提出的设备的超低功率操作遵循的事实,即信号传播不仅是基于电荷的移动,而且基于固体棒的位移。这将NEM继电器和基于NEMS的晶体管与传统MOSFET区分开来。更广泛的影响将促进纳米电子劳动力的多样性,并提供知识技术转让,研究和教育的整合,公共教育,少数民族学生外联和促进伙伴关系。具体而言,与获奖的Silicon Run Film Series的制片人合作,将制作关于MEMS和纳米电子学的新教育电影。它们将作为在这些新领域教学的教育工作者的资源,并协助支持学科的教师的专业发展。
英文摘要
Proposal No. 0801334Fabrication of the NEM and NEMFET Logic Gatesvia Top-Down and Bottom-up ProcessesH.-S. Philip Wonghspwong@stanford.eduStanford University250 Word Abstract:The objective of this research is to demonstrate for the first-time ultra-low power logic gates based on nanoelectromechanical (NEM) switches and NEM field-effect transistors. The proposed devices will solve the ever aggravating leakage and static power consumption problem of the CMOS technologies. The approach is to pursue simultaneously the lithography-based top-down processes and the nanowire/carbon nanotube-based bottom-up techniques. The proposed research aligns well with the EPDT program which aims at improving the fundamental understanding of devices and components based on the principles of electronics and electromechanics. The intellectual merit resides in the experimental realization of extremely low power ULSI logic systems combining two traditionally distinct domains (MEMS and CMOS logic). Micron-sized MEMS devices will be extended into the nanoscale regime. The ultra-low power operation of the proposed devices follows from the fact that the signal propagation is based not only on the movement of charge but also on the displacement of a solid rod. This distinguishes the NEM relays and the NEMS-based transistors from the conventional MOSFETs. The broader impacts will advance diversity in the nanoelectronics workforce and provide intellectual technology transfer, integration of research and education, public education, minority student outreach, and promotion of partnerships. Specifically, collaboration with the producers of the award-winning Silicon Run Film Series will result in new educational films on MEMS and nanoelectronics. They will serve as a resource to educators teaching in these new fields and assist with the professional development of instructors in supporting disciplines.
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