Understanding Molecular Reactivity at Semiconductor Surfaces

斯坦福大学的Stacey F. Bent教授受化学系分析和表面化学项目的支持，研究双功能分子与Ge（100）和Si（100）半导体表面的反应性。将探讨附着、位移和逐层表面修饰方法。实验和理论相结合的方法，包括表面红外、x射线光电子能谱、热解吸光谱和密度泛函理论计算，将用于研究电子、位阻、键应变、接近度、焓和熵参数对表面双功能分子的反应性和竞争结合的影响。提出的研究旨在更好地理解半导体表面的有机附着。通过有机层修饰半导体系统的界面特性在纳米线和量子点钝化、模板化组装、MEMS器件、传感器和有机光伏等各种应用中发挥着重要作用。教育活动包括训练研究生和本科生掌握最先进的表面分析方法。

Professor Stacey F. Bent of Stanford University is supported by the Analytical and Surface Chemistry Program in the Division of Chemistry to study the reactivity of bifunctional molecules with Ge (100) and Si (100) semiconductor surfaces. Attachment, displacement, and layer-by-layer surface modification methods will be explored. A combination of experimental and theoretical methods, including surface infrared, x-ray photoelectron spectroscopy, thermal desorption spectrometry, and density functional theory calculations, will be used to study the effect of electronic, steric, bond strain, proximity, enthalpy and entropy parameters on the reactivity and competitive binding of bifunctional molecules at the surface. The proposed research aims for a better understanding of organic attachment to semiconductor surfaces. Modifying the interfacial properties of semiconductor systems by organic layers plays an important role in a variety of applications, such as nanowire and quantum dot passivation, templated assembly, MEMS devices, sensors, and organic photovoltaics. The educational activities involve training of graduate and undergraduate students in state-of-the-art surface analysis methods.