Mechanism-Based Approaches for CVD/ALD of Cu Barriers

无机化学、生物无机化学和金属有机化学项目的这项研究奖支持佛罗里达大学的Lisa McElwee-White教授和Tim Anderson教授的工作，他们开发了用于制造先进集成电路的铜金属化阻挡材料薄膜的生长工艺。初始靶材是Ru，它可以作为无籽铜金属化的界面层。结合计算化学的基于机理的设计允许在合成之前对含Ru的薄膜生长前体进行评估。一个重要的方面是使用为所有分子设计的不依赖于挥发性的替代前体输送系统，从而扩大了可能的前体的范围。在制备潜在的前驱体之后，快速筛选选择最有希望的候选薄膜沉积和表征。与业界的合作促进了工艺开发和优化，包括反应堆建模。研究生在化学、化学工程和材料科学方面接受基于跨学科团队解决问题的培训。工业实习、本科生研究人员指导和与工业研究人员的互动被用来拓宽学生的视野。过去6年来，其中一名PI(Anderson)在全国会议上为新教师和未来教师提供的关于职业发展的研讨会正在修改，以向化学教师介绍。薄膜的沉积是一项关键的技术能力。创新往往依赖于沉积具有非常特殊的成分、表面形态、微结构、厚度和界面化学的薄膜的能力。开发一种用于铜金属化的阻挡层材料的沉积工艺将解决先进集成电路制造中的当前挑战。

This Research award in the Inorganic, Bioinorganic and Organometallic Chemistry program supports work by Professors Lisa McElwee-White and Tim Anderson at the University of Florida to develop processes for the growth of thin films of barrier material for Cu metallization used in the manufacture of advanced integrated circuits. The initial target material is ruthenium, which can serve in interfacial layers for seedless Cu metallization. Mechanism-based design accompanied by computational chemistry allows evaluation of Ru-containing film growth precursors before synthesis. An important aspect is the use of alternative precursor delivery systems designed for all molecules independent of volatility, thus expanding the range of possible precursors. Following preparation of potential precursors, rapid screening selects the most promising candidates for film deposition and characterization. Collaboration with industry facilitates process development and optimization including reactor modeling. Graduate students are trained in interdisciplinary team-based problem solving in chemistry, chemical engineering and materials science. Industrial internships, mentoring of undergraduate researchers and interactions with industrial research personnel are used to broaden the students' perspectives. A workshop that one of the PIs (Anderson) has presented on career development for new and prospective faculty for the last 6 years at national meetings is being adapted for presentation to chemistry faculty. The deposition of thin films is a key technological capability. Innovation often relies on the ability to deposit films with very specific composition, surface morphology, microstructure, thickness, and interfacial chemistry. Developing a process for deposition of a barrier material for Cu metallization will address a current challenge in the manufacture of advanced integrated circuits.